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An experimental study of the indium antimonide thin film transistor

André Van Calster UGent (1979) SOLID-STATE ELECTRONICS. 22(1). p.77-80
Please use this url to cite or link to this publication:
author
organization
alternative title
Experimental-study of the indium-antimonide thin-film transistor
year
type
journalArticle (original)
publication status
published
subject
journal title
SOLID-STATE ELECTRONICS
Solid-State Electron.
volume
22
issue
1
pages
77 - 80
Web of Science type
Article
ISSN
0038-1101
DOI
10.1016/0038-1101(79)90174-6
language
English
UGent publication?
yes
classification
A1
id
207795
handle
http://hdl.handle.net/1854/LU-207795
date created
2004-01-26 14:34:00
date last changed
2016-12-19 15:38:01
@article{207795,
  author       = {Van Calster, Andr{\'e}},
  issn         = {0038-1101},
  journal      = {SOLID-STATE ELECTRONICS},
  language     = {eng},
  number       = {1},
  pages        = {77--80},
  title        = {An experimental study of the indium antimonide thin film transistor},
  url          = {http://dx.doi.org/10.1016/0038-1101(79)90174-6},
  volume       = {22},
  year         = {1979},
}

Chicago
Van Calster, André. 1979. “An Experimental Study of the Indium Antimonide Thin Film Transistor.” Solid-state Electronics 22 (1): 77–80.
APA
Van Calster, A. (1979). An experimental study of the indium antimonide thin film transistor. SOLID-STATE ELECTRONICS, 22(1), 77–80.
Vancouver
1.
Van Calster A. An experimental study of the indium antimonide thin film transistor. SOLID-STATE ELECTRONICS. 1979;22(1):77–80.
MLA
Van Calster, André. “An Experimental Study of the Indium Antimonide Thin Film Transistor.” SOLID-STATE ELECTRONICS 22.1 (1979): 77–80. Print.