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This paper reports on the impact and modeling of lateral doping gradient present in the intrinsic MOS channel of high voltage MOSFETs e.g. VDMOS and LDMOS. It is shown that the conventional MOSFET models using uniform lateral doping can never correctly model the capacitance behavior of these devices. A new charge-based analytical compact model for lateral non-uniformly doped MOSFET is reported. The model is validated on the measured characteristics of VDMOS and LDMOS transistors. The model shows good results in DC and, most importantly in AC regime, especially in simulating the peaks in C(GD), C(GS) and C(GG) capacitances. This new model improves the accuracy of high voltage MOS models, especially output characteristics and during transient response (i.e. amplitude and position of peaks as well as slope of capacitances).

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Chicago
Chauhan, Yooesh Singh, Francois Krummenacher, Costin Anghel, Renuad Gillon, Benoit Bakeroot, Michel Declercq, and Adrian Mihai Lonescu. 2006. “Analysis and Modeling of Lateral Non-uniform Doping in High-voltage MOSFETs.” In International Electron Devices Meeting, 894–897. New York, NY, USA: IEEE.
APA
Chauhan, Yooesh Singh, Krummenacher, F., Anghel, C., Gillon, R., Bakeroot, B., Declercq, M., & Lonescu, A. M. (2006). Analysis and modeling of lateral non-uniform doping in high-voltage MOSFETs. International Electron Devices Meeting (pp. 894–897). Presented at the IEEE International Electron Devices Meeting, New York, NY, USA: IEEE.
Vancouver
1.
Chauhan YS, Krummenacher F, Anghel C, Gillon R, Bakeroot B, Declercq M, et al. Analysis and modeling of lateral non-uniform doping in high-voltage MOSFETs. International Electron Devices Meeting. New York, NY, USA: IEEE; 2006. p. 894–7.
MLA
Chauhan, Yooesh Singh, Francois Krummenacher, Costin Anghel, et al. “Analysis and Modeling of Lateral Non-uniform Doping in High-voltage MOSFETs.” International Electron Devices Meeting. New York, NY, USA: IEEE, 2006. 894–897. Print.
@inproceedings{2061896,
  abstract     = {This paper reports on the impact and modeling of lateral doping gradient present in the intrinsic MOS channel of high voltage MOSFETs e.g. VDMOS and LDMOS. It is shown that the conventional MOSFET models using uniform lateral doping can never correctly model the capacitance behavior of these devices. A new charge-based analytical compact model for lateral non-uniformly doped MOSFET is reported. The model is validated on the measured characteristics of VDMOS and LDMOS transistors. The model shows good results in DC and, most importantly in AC regime, especially in simulating the peaks in C(GD), C(GS) and C(GG) capacitances. This new model improves the accuracy of high voltage MOS models, especially output characteristics and during transient response (i.e. amplitude and position of peaks as well as slope of capacitances).},
  author       = {Chauhan, Yooesh Singh and Krummenacher, Francois and Anghel, Costin and Gillon, Renuad and Bakeroot, Benoit and Declercq, Michel and Lonescu, Adrian Mihai},
  booktitle    = {International Electron Devices Meeting},
  isbn         = {9781424404384},
  language     = {eng},
  location     = {San Francisco, CA, USA},
  pages        = {894--897},
  publisher    = {IEEE},
  title        = {Analysis and modeling of lateral non-uniform doping in high-voltage MOSFETs},
  year         = {2006},
}

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