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Abstract
Ultrathin Al(2)O(3) films were deposited by PEALD as Cu diffusion barrier on low-k (k=2.5) material. The thermal stability and electrical properties of the Cu/low k system with Al(2)O(3) layers with different thickness were studied after annealing. The AES, TEM and EDX results revealed that the ultrathin Al(2)O(3) films are thermally stable and have excellent Cu diffusion barrier performance. The electrical measurements of dielectric breakdown and TDDB tests further confirmed that the ultrathin Al(2)O(3) film is a potential Cu diffusion barrier in the Cu/low-k interconnects system.
Keywords
INTERCONNECTS, ATOMIC LAYER DEPOSITION

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MLA
Ding, Shao-Feng et al. “Investigation of Ultra-thin Al₂O₃ Film as Cu Diffusion Barrier on Low-k (k=2.5) Dielectrics.” 2011 IEEE International Interconnect Technology Conference and Materials for Advanced Metallization (IITC/MAM). New York, NY, USA: IEEE, 2011. Print.
APA
Ding, S.-F., Xie, Q., Chen, F., Lu, H.-S., Deng, S.-R., Detavernier, C., Ru, G.-P., et al. (2011). Investigation of ultra-thin Al₂O₃ film as Cu diffusion barrier on low-k (k=2.5) dielectrics. 2011 IEEE international interconnect technology conference and materials for advanced metallization (IITC/MAM). Presented at the IEEE International Interconnect Technology conference and Materials for Advanced Metallization (IITC/MAM), New York, NY, USA: IEEE.
Chicago author-date
Ding, Shao-Feng, Qi Xie, Fei Chen, Hai-Sheng Lu, Shao-Ren Deng, Christophe Detavernier, Guo-Ping Ru, Yu-Long Jiang, and Xin-Ping Qu. 2011. “Investigation of Ultra-thin Al₂O₃ Film as Cu Diffusion Barrier on Low-k (k=2.5) Dielectrics.” In 2011 IEEE International Interconnect Technology Conference and Materials for Advanced Metallization (IITC/MAM). New York, NY, USA: IEEE.
Chicago author-date (all authors)
Ding, Shao-Feng, Qi Xie, Fei Chen, Hai-Sheng Lu, Shao-Ren Deng, Christophe Detavernier, Guo-Ping Ru, Yu-Long Jiang, and Xin-Ping Qu. 2011. “Investigation of Ultra-thin Al₂O₃ Film as Cu Diffusion Barrier on Low-k (k=2.5) Dielectrics.” In 2011 IEEE International Interconnect Technology Conference and Materials for Advanced Metallization (IITC/MAM). New York, NY, USA: IEEE.
Vancouver
1.
Ding S-F, Xie Q, Chen F, Lu H-S, Deng S-R, Detavernier C, et al. Investigation of ultra-thin Al₂O₃ film as Cu diffusion barrier on low-k (k=2.5) dielectrics. 2011 IEEE international interconnect technology conference and materials for advanced metallization (IITC/MAM). New York, NY, USA: IEEE; 2011.
IEEE
[1]
S.-F. Ding et al., “Investigation of ultra-thin Al₂O₃ film as Cu diffusion barrier on low-k (k=2.5) dielectrics,” in 2011 IEEE international interconnect technology conference and materials for advanced metallization (IITC/MAM), Dresden, Germany, 2011.
@inproceedings{2042988,
  abstract     = {Ultrathin Al(2)O(3) films were deposited by PEALD as Cu diffusion barrier on low-k (k=2.5) material. The thermal stability and electrical properties of the Cu/low k system with Al(2)O(3) layers with different thickness were studied after annealing. The AES, TEM and EDX results revealed that the ultrathin Al(2)O(3) films are thermally stable and have excellent Cu diffusion barrier performance. The electrical measurements of dielectric breakdown and TDDB tests further confirmed that the ultrathin Al(2)O(3) film is a potential Cu diffusion barrier in the Cu/low-k interconnects system.},
  author       = {Ding, Shao-Feng and Xie, Qi and Chen, Fei and Lu, Hai-Sheng and Deng, Shao-Ren and Detavernier, Christophe and Ru, Guo-Ping and Jiang, Yu-Long and Qu, Xin-Ping},
  booktitle    = {2011 IEEE international interconnect technology conference and materials for advanced metallization (IITC/MAM)},
  isbn         = {9781457705021},
  keywords     = {INTERCONNECTS,ATOMIC LAYER DEPOSITION},
  language     = {eng},
  location     = {Dresden, Germany},
  pages        = {3},
  publisher    = {IEEE},
  title        = {Investigation of ultra-thin Al₂O₃ film as Cu diffusion barrier on low-k (k=2.5) dielectrics},
  year         = {2011},
}

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