Advanced search
1 file | 667.52 KB

Effective Schottky Barrier height modulation by an ultrathin passivation layer of GeOxNy for Al/n-Ge(100) contact

Author
Organization

Downloads

  • (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 667.52 KB

Citation

Please use this url to cite or link to this publication:

Chicago
Jiang, Yu-Long, Qi Xie, Xin-Ping Qu, Guo-Ping Ru, David W Zhang, Davy Deduytsche, and Christophe Detavernier. 2011. “Effective Schottky Barrier Height Modulation by an Ultrathin Passivation Layer of GeOxNy for Al/n-Ge(100) Contact.” Electrochemical and Solid State Letters 14 (12): H487–H490.
APA
Jiang, Y.-L., Xie, Q., Qu, X.-P., Ru, G.-P., Zhang, D. W., Deduytsche, D., & Detavernier, C. (2011). Effective Schottky Barrier height modulation by an ultrathin passivation layer of GeOxNy for Al/n-Ge(100) contact. ELECTROCHEMICAL AND SOLID STATE LETTERS, 14(12), H487–H490.
Vancouver
1.
Jiang Y-L, Xie Q, Qu X-P, Ru G-P, Zhang DW, Deduytsche D, et al. Effective Schottky Barrier height modulation by an ultrathin passivation layer of GeOxNy for Al/n-Ge(100) contact. ELECTROCHEMICAL AND SOLID STATE LETTERS. 2011;14(12):H487–H490.
MLA
Jiang, Yu-Long, Qi Xie, Xin-Ping Qu, et al. “Effective Schottky Barrier Height Modulation by an Ultrathin Passivation Layer of GeOxNy for Al/n-Ge(100) Contact.” ELECTROCHEMICAL AND SOLID STATE LETTERS 14.12 (2011): H487–H490. Print.
@article{2042979,
  author       = {Jiang, Yu-Long and Xie, Qi and Qu, Xin-Ping and Ru, Guo-Ping and Zhang, David W and Deduytsche, Davy and Detavernier, Christophe},
  issn         = {1099-0062},
  journal      = {ELECTROCHEMICAL AND SOLID STATE LETTERS},
  language     = {eng},
  number       = {12},
  pages        = {H487--H490},
  title        = {Effective Schottky Barrier height modulation by an ultrathin passivation layer of GeOxNy for Al/n-Ge(100) contact},
  url          = {http://dx.doi.org/10.1149/2.004112esl},
  volume       = {14},
  year         = {2011},
}

Altmetric
View in Altmetric
Web of Science
Times cited: