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Effective Schottky Barrier height modulation by an ultrathin passivation layer of GeOxNy for Al/n-Ge(100) contact

Yu-Long Jiang, Qi Xie UGent, Xin-Ping Qu, Guo-Ping Ru, David W Zhang, Davy Deduytsche UGent and Christophe Detavernier UGent (2011) ELECTROCHEMICAL AND SOLID STATE LETTERS. 14(12). p.H487-H490
Please use this url to cite or link to this publication:
author
organization
alternative title
Effective Schottky Barrier height modulation by an ultrathin passivation layer of GeO(x)N(y) for Al/n-Ge(100) contact
year
type
journalArticle (original)
publication status
published
subject
journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
Electrochem. Solid State Lett.
volume
14
issue
12
pages
H487 - H490
Web of Science type
Article
Web of Science id
000296661100017
JCR category
MATERIALS SCIENCE, MULTIDISCIPLINARY
JCR impact factor
1.995 (2011)
JCR rank
62/229 (2011)
JCR quartile
2 (2011)
ISSN
1099-0062
DOI
10.1149/2.004112esl
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
2042979
handle
http://hdl.handle.net/1854/LU-2042979
date created
2012-02-23 18:10:33
date last changed
2018-06-27 13:11:54
@article{2042979,
  author       = {Jiang, Yu-Long and Xie, Qi and Qu, Xin-Ping and Ru, Guo-Ping and Zhang, David W and Deduytsche, Davy and Detavernier, Christophe},
  issn         = {1099-0062},
  journal      = {ELECTROCHEMICAL AND SOLID STATE LETTERS},
  language     = {eng},
  number       = {12},
  pages        = {H487--H490},
  title        = {Effective Schottky Barrier height modulation by an ultrathin passivation layer of GeOxNy for Al/n-Ge(100) contact},
  url          = {http://dx.doi.org/10.1149/2.004112esl},
  volume       = {14},
  year         = {2011},
}

Chicago
Jiang, Yu-Long, Qi Xie, Xin-Ping Qu, Guo-Ping Ru, David W Zhang, Davy Deduytsche, and Christophe Detavernier. 2011. “Effective Schottky Barrier Height Modulation by an Ultrathin Passivation Layer of GeOxNy for Al/n-Ge(100) Contact.” Electrochemical and Solid State Letters 14 (12): H487–H490.
APA
Jiang, Y.-L., Xie, Q., Qu, X.-P., Ru, G.-P., Zhang, D. W., Deduytsche, D., & Detavernier, C. (2011). Effective Schottky Barrier height modulation by an ultrathin passivation layer of GeOxNy for Al/n-Ge(100) contact. ELECTROCHEMICAL AND SOLID STATE LETTERS, 14(12), H487–H490.
Vancouver
1.
Jiang Y-L, Xie Q, Qu X-P, Ru G-P, Zhang DW, Deduytsche D, et al. Effective Schottky Barrier height modulation by an ultrathin passivation layer of GeOxNy for Al/n-Ge(100) contact. ELECTROCHEMICAL AND SOLID STATE LETTERS. 2011;14(12):H487–H490.
MLA
Jiang, Yu-Long, Qi Xie, Xin-Ping Qu, et al. “Effective Schottky Barrier Height Modulation by an Ultrathin Passivation Layer of GeOxNy for Al/n-Ge(100) Contact.” ELECTROCHEMICAL AND SOLID STATE LETTERS 14.12 (2011): H487–H490. Print.