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The inhibition of enhanced Cu oxidation on ruthenium/diffusion barrier layers for Cu interconnects by carbon alloying into Ru

(2011) JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 158(12). p.H1228-H1232
Author
Organization
Keywords
COPPER, DUAL-DAMASCENE, THIN-FILM, DIFFUSION BARRIER, METALLIZATION, DEPOSITION, OXIDE, TAN, RELIABILITY, FAILURE

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Citation

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MLA
Ding, Shao-Feng, Qi Xie, Steve Müeller, et al. “The Inhibition of Enhanced Cu Oxidation on Ruthenium/diffusion Barrier Layers for Cu Interconnects by Carbon Alloying into Ru.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 158.12 (2011): H1228–H1232. Print.
APA
Ding, S.-F., Xie, Q., Müeller, S., Waechtler, T., Lu, H.-S., Schulz, S. E., Detavernier, C., et al. (2011). The inhibition of enhanced Cu oxidation on ruthenium/diffusion barrier layers for Cu interconnects by carbon alloying into Ru. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 158(12), H1228–H1232.
Chicago author-date
Ding, Shao-Feng, Qi Xie, Steve Müeller, Thomas Waechtler, Hai-Sheng Lu, Stefan E Schulz, Christophe Detavernier, Xin-Ping Qu, and Thomas Gessner. 2011. “The Inhibition of Enhanced Cu Oxidation on Ruthenium/diffusion Barrier Layers for Cu Interconnects by Carbon Alloying into Ru.” Journal of the Electrochemical Society 158 (12): H1228–H1232.
Chicago author-date (all authors)
Ding, Shao-Feng, Qi Xie, Steve Müeller, Thomas Waechtler, Hai-Sheng Lu, Stefan E Schulz, Christophe Detavernier, Xin-Ping Qu, and Thomas Gessner. 2011. “The Inhibition of Enhanced Cu Oxidation on Ruthenium/diffusion Barrier Layers for Cu Interconnects by Carbon Alloying into Ru.” Journal of the Electrochemical Society 158 (12): H1228–H1232.
Vancouver
1.
Ding S-F, Xie Q, Müeller S, Waechtler T, Lu H-S, Schulz SE, et al. The inhibition of enhanced Cu oxidation on ruthenium/diffusion barrier layers for Cu interconnects by carbon alloying into Ru. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 2011;158(12):H1228–H1232.
IEEE
[1]
S.-F. Ding et al., “The inhibition of enhanced Cu oxidation on ruthenium/diffusion barrier layers for Cu interconnects by carbon alloying into Ru,” JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 158, no. 12, pp. H1228–H1232, 2011.
@article{2042968,
  author       = {Ding, Shao-Feng and Xie, Qi and Müeller, Steve and Waechtler, Thomas and Lu, Hai-Sheng and Schulz, Stefan E and Detavernier, Christophe and Qu, Xin-Ping and Gessner, Thomas},
  issn         = {0013-4651},
  journal      = {JOURNAL OF THE ELECTROCHEMICAL SOCIETY},
  keywords     = {COPPER,DUAL-DAMASCENE,THIN-FILM,DIFFUSION BARRIER,METALLIZATION,DEPOSITION,OXIDE,TAN,RELIABILITY,FAILURE},
  language     = {eng},
  number       = {12},
  pages        = {H1228--H1232},
  title        = {The inhibition of enhanced Cu oxidation on ruthenium/diffusion barrier layers for Cu interconnects by carbon alloying into Ru},
  url          = {http://dx.doi.org/10.1149/2.041112jes},
  volume       = {158},
  year         = {2011},
}

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