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High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing

Qi Xie UGent, ShaoRen Deng, Marc Schaekers, Dennis Lin, Matty Caymax, Annelies Delabie, YuLong Jiang, XinPing Qu, Davy Deduytsche UGent and Christophe Detavernier UGent (2011) IEEE ELECTRON DEVICE LETTERS. 32(12). p.1656-1658
abstract
Very promising capacitance-voltage (C-V) characteristics of capacitors on both p- and n-type Ge substrates are demonstrated by using an in situ O-2 plasma passivation and an O-2 ambient annealing. The capacitors exhibited a small equivalent oxide thickness of similar to 1.5 nm and a low D-it (< 6 * 10(11) cm(-2)eV(-1)) energy distribution covering the major part of the Ge bandgap (> 0.51 eV). The surface potential modulation efficiency was estimated to be similar to 80% from flatband to strong inversion on both types of Ge. C-V hysteresis was less than 10 mV with positive bias up to 1.5 V. A low gate leakage current density of < 9 * 10(-8) A/cm(2) at V-FB +/- 1 V indicates high quality of the HfO2/GeO2 gate stacks. Excellent comprehensive properties suggest that a combination of O-2 plasma passivation and O-2 ambient annealing provides a promising technology for GeO2-based CMOS devices.
Please use this url to cite or link to this publication:
author
organization
alternative title
High-performance Ge MOS capacitors by O2 plasma passivation and O2 ambient annealing
High-performance Ge MOS capacitors by O-2 plasma passivation and O-2 ambient annealing
year
type
journalArticle (original)
publication status
published
subject
keyword
interface passivation, O-2 ambient annealing, Ge, DENSITY, OXIDATION
journal title
IEEE ELECTRON DEVICE LETTERS
IEEE Electron Device Lett.
volume
32
issue
12
pages
1656 - 1658
Web of Science type
Article
Web of Science id
000297352500003
JCR category
ENGINEERING, ELECTRICAL & ELECTRONIC
JCR impact factor
2.849 (2011)
JCR rank
23/244 (2011)
JCR quartile
1 (2011)
ISSN
0741-3106
DOI
10.1109/LED.2011.2166993
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
2042936
handle
http://hdl.handle.net/1854/LU-2042936
date created
2012-02-23 18:10:33
date last changed
2016-12-19 15:42:53
@article{2042936,
  abstract     = {Very promising capacitance-voltage (C-V) characteristics of capacitors on both p- and n-type Ge substrates are demonstrated by using an in situ O-2 plasma passivation and an O-2 ambient annealing. The capacitors exhibited a small equivalent oxide thickness of similar to 1.5 nm and a low D-it ({\textlangle} 6 * 10(11) cm(-2)eV(-1)) energy distribution covering the major part of the Ge bandgap ({\textrangle} 0.51 eV). The surface potential modulation efficiency was estimated to be similar to 80\% from flatband to strong inversion on both types of Ge. C-V hysteresis was less than 10 mV with positive bias up to 1.5 V. A low gate leakage current density of {\textlangle} 9 * 10(-8) A/cm(2) at V-FB +/- 1 V indicates high quality of the HfO2/GeO2 gate stacks. Excellent comprehensive properties suggest that a combination of O-2 plasma passivation and O-2 ambient annealing provides a promising technology for GeO2-based CMOS devices.},
  author       = {Xie, Qi and Deng, ShaoRen and Schaekers, Marc and Lin, Dennis and Caymax, Matty and Delabie, Annelies and Jiang, YuLong and Qu, XinPing and Deduytsche, Davy and Detavernier, Christophe},
  issn         = {0741-3106},
  journal      = {IEEE ELECTRON DEVICE LETTERS},
  keyword      = {interface passivation,O-2 ambient annealing,Ge,DENSITY,OXIDATION},
  language     = {eng},
  number       = {12},
  pages        = {1656--1658},
  title        = {High-performance Ge MOS capacitors by O\unmatched{2082} plasma passivation and O\unmatched{2082} ambient annealing},
  url          = {http://dx.doi.org/10.1109/LED.2011.2166993},
  volume       = {32},
  year         = {2011},
}

Chicago
Xie, Qi, ShaoRen Deng, Marc Schaekers, Dennis Lin, Matty Caymax, Annelies Delabie, YuLong Jiang, XinPing Qu, Davy Deduytsche, and Christophe Detavernier. 2011. “High-performance Ge MOS Capacitors by O₂ Plasma Passivation and O₂ Ambient Annealing.” Ieee Electron Device Letters 32 (12): 1656–1658.
APA
Xie, Qi, Deng, S., Schaekers, M., Lin, D., Caymax, M., Delabie, A., Jiang, Y., et al. (2011). High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing. IEEE ELECTRON DEVICE LETTERS, 32(12), 1656–1658.
Vancouver
1.
Xie Q, Deng S, Schaekers M, Lin D, Caymax M, Delabie A, et al. High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing. IEEE ELECTRON DEVICE LETTERS. 2011;32(12):1656–8.
MLA
Xie, Qi, ShaoRen Deng, Marc Schaekers, et al. “High-performance Ge MOS Capacitors by O₂ Plasma Passivation and O₂ Ambient Annealing.” IEEE ELECTRON DEVICE LETTERS 32.12 (2011): 1656–1658. Print.