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High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing

(2011) IEEE ELECTRON DEVICE LETTERS. 32(12). p.1656-1658
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Abstract
Very promising capacitance-voltage (C-V) characteristics of capacitors on both p- and n-type Ge substrates are demonstrated by using an in situ O-2 plasma passivation and an O-2 ambient annealing. The capacitors exhibited a small equivalent oxide thickness of similar to 1.5 nm and a low D-it (< 6 * 10(11) cm(-2)eV(-1)) energy distribution covering the major part of the Ge bandgap (> 0.51 eV). The surface potential modulation efficiency was estimated to be similar to 80% from flatband to strong inversion on both types of Ge. C-V hysteresis was less than 10 mV with positive bias up to 1.5 V. A low gate leakage current density of < 9 * 10(-8) A/cm(2) at V-FB +/- 1 V indicates high quality of the HfO2/GeO2 gate stacks. Excellent comprehensive properties suggest that a combination of O-2 plasma passivation and O-2 ambient annealing provides a promising technology for GeO2-based CMOS devices.
Keywords
interface passivation, O-2 ambient annealing, Ge, DENSITY, OXIDATION

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Citation

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Chicago
Xie, Qi, ShaoRen Deng, Marc Schaekers, Dennis Lin, Matty Caymax, Annelies Delabie, YuLong Jiang, XinPing Qu, Davy Deduytsche, and Christophe Detavernier. 2011. “High-performance Ge MOS Capacitors by O₂ Plasma Passivation and O₂ Ambient Annealing.” Ieee Electron Device Letters 32 (12): 1656–1658.
APA
Xie, Qi, Deng, S., Schaekers, M., Lin, D., Caymax, M., Delabie, A., Jiang, Y., et al. (2011). High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing. IEEE ELECTRON DEVICE LETTERS, 32(12), 1656–1658.
Vancouver
1.
Xie Q, Deng S, Schaekers M, Lin D, Caymax M, Delabie A, et al. High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing. IEEE ELECTRON DEVICE LETTERS. 2011;32(12):1656–8.
MLA
Xie, Qi, ShaoRen Deng, Marc Schaekers, et al. “High-performance Ge MOS Capacitors by O₂ Plasma Passivation and O₂ Ambient Annealing.” IEEE ELECTRON DEVICE LETTERS 32.12 (2011): 1656–1658. Print.
@article{2042936,
  abstract     = {Very promising capacitance-voltage (C-V) characteristics of capacitors on both p- and n-type Ge substrates are demonstrated by using an in situ O-2 plasma passivation and an O-2 ambient annealing. The capacitors exhibited a small equivalent oxide thickness of similar to 1.5 nm and a low D-it ({\textlangle} 6 * 10(11) cm(-2)eV(-1)) energy distribution covering the major part of the Ge bandgap ({\textrangle} 0.51 eV). The surface potential modulation efficiency was estimated to be similar to 80\% from flatband to strong inversion on both types of Ge. C-V hysteresis was less than 10 mV with positive bias up to 1.5 V. A low gate leakage current density of {\textlangle} 9 * 10(-8) A/cm(2) at V-FB +/- 1 V indicates high quality of the HfO2/GeO2 gate stacks. Excellent comprehensive properties suggest that a combination of O-2 plasma passivation and O-2 ambient annealing provides a promising technology for GeO2-based CMOS devices.},
  author       = {Xie, Qi and Deng, ShaoRen and Schaekers, Marc and Lin, Dennis and Caymax, Matty and Delabie, Annelies and Jiang, YuLong and Qu, XinPing and Deduytsche, Davy and Detavernier, Christophe},
  issn         = {0741-3106},
  journal      = {IEEE ELECTRON DEVICE LETTERS},
  keyword      = {interface passivation,O-2 ambient annealing,Ge,DENSITY,OXIDATION},
  language     = {eng},
  number       = {12},
  pages        = {1656--1658},
  title        = {High-performance Ge MOS capacitors by O\unmatched{2082} plasma passivation and O\unmatched{2082} ambient annealing},
  url          = {http://dx.doi.org/10.1109/LED.2011.2166993},
  volume       = {32},
  year         = {2011},
}

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