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High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing

(2011) IEEE ELECTRON DEVICE LETTERS. 32(12). p.1656-1658
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Abstract
Very promising capacitance-voltage (C-V) characteristics of capacitors on both p- and n-type Ge substrates are demonstrated by using an in situ O-2 plasma passivation and an O-2 ambient annealing. The capacitors exhibited a small equivalent oxide thickness of similar to 1.5 nm and a low D-it (< 6 * 10(11) cm(-2)eV(-1)) energy distribution covering the major part of the Ge bandgap (> 0.51 eV). The surface potential modulation efficiency was estimated to be similar to 80% from flatband to strong inversion on both types of Ge. C-V hysteresis was less than 10 mV with positive bias up to 1.5 V. A low gate leakage current density of < 9 * 10(-8) A/cm(2) at V-FB +/- 1 V indicates high quality of the HfO2/GeO2 gate stacks. Excellent comprehensive properties suggest that a combination of O-2 plasma passivation and O-2 ambient annealing provides a promising technology for GeO2-based CMOS devices.
Keywords
interface passivation, O-2 ambient annealing, Ge, DENSITY, OXIDATION

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MLA
Xie, Qi, ShaoRen Deng, Marc Schaekers, et al. “High-performance Ge MOS Capacitors by O₂ Plasma Passivation and O₂ Ambient Annealing.” IEEE ELECTRON DEVICE LETTERS 32.12 (2011): 1656–1658. Print.
APA
Xie, Qi, Deng, S., Schaekers, M., Lin, D., Caymax, M., Delabie, A., Jiang, Y., et al. (2011). High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing. IEEE ELECTRON DEVICE LETTERS, 32(12), 1656–1658.
Chicago author-date
Xie, Qi, ShaoRen Deng, Marc Schaekers, Dennis Lin, Matty Caymax, Annelies Delabie, YuLong Jiang, XinPing Qu, Davy Deduytsche, and Christophe Detavernier. 2011. “High-performance Ge MOS Capacitors by O₂ Plasma Passivation and O₂ Ambient Annealing.” Ieee Electron Device Letters 32 (12): 1656–1658.
Chicago author-date (all authors)
Xie, Qi, ShaoRen Deng, Marc Schaekers, Dennis Lin, Matty Caymax, Annelies Delabie, YuLong Jiang, XinPing Qu, Davy Deduytsche, and Christophe Detavernier. 2011. “High-performance Ge MOS Capacitors by O₂ Plasma Passivation and O₂ Ambient Annealing.” Ieee Electron Device Letters 32 (12): 1656–1658.
Vancouver
1.
Xie Q, Deng S, Schaekers M, Lin D, Caymax M, Delabie A, et al. High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing. IEEE ELECTRON DEVICE LETTERS. 2011;32(12):1656–8.
IEEE
[1]
Q. Xie et al., “High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing,” IEEE ELECTRON DEVICE LETTERS, vol. 32, no. 12, pp. 1656–1658, 2011.
@article{2042936,
  abstract     = {{Very promising capacitance-voltage (C-V) characteristics of capacitors on both p- and n-type Ge substrates are demonstrated by using an in situ O-2 plasma passivation and an O-2 ambient annealing. The capacitors exhibited a small equivalent oxide thickness of similar to 1.5 nm and a low D-it (< 6 * 10(11) cm(-2)eV(-1)) energy distribution covering the major part of the Ge bandgap (> 0.51 eV). The surface potential modulation efficiency was estimated to be similar to 80% from flatband to strong inversion on both types of Ge. C-V hysteresis was less than 10 mV with positive bias up to 1.5 V. A low gate leakage current density of < 9 * 10(-8) A/cm(2) at V-FB +/- 1 V indicates high quality of the HfO2/GeO2 gate stacks. Excellent comprehensive properties suggest that a combination of O-2 plasma passivation and O-2 ambient annealing provides a promising technology for GeO2-based CMOS devices.}},
  author       = {{Xie, Qi and Deng, ShaoRen and Schaekers, Marc and Lin, Dennis and Caymax, Matty and Delabie, Annelies and Jiang, YuLong and Qu, XinPing and Deduytsche, Davy and Detavernier, Christophe}},
  issn         = {{0741-3106}},
  journal      = {{IEEE ELECTRON DEVICE LETTERS}},
  keywords     = {{interface passivation,O-2 ambient annealing,Ge,DENSITY,OXIDATION}},
  language     = {{eng}},
  number       = {{12}},
  pages        = {{1656--1658}},
  title        = {{High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing}},
  url          = {{http://dx.doi.org/10.1109/LED.2011.2166993}},
  volume       = {{32}},
  year         = {{2011}},
}

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