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BROMINE-METHANOL AS AN ETCHANT FOR SEMICONDUCTORS - A FUNDAMENTAL-STUDY ON GAP .1. ETCHING BEHAVIOR OF N-TYPE AND P-TYPE GAP.

Katrien Strubbe (UGent) and Walter Gomes (UGent)
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Chicago
Strubbe, Katrien, and Walter Gomes. 1993. “BROMINE-METHANOL AS AN ETCHANT FOR SEMICONDUCTORS - A FUNDAMENTAL-STUDY ON GAP .1. ETCHING BEHAVIOR OF N-TYPE AND P-TYPE GAP.” Journal of the Electrochemical Society 140 (11): 3294–3300.
APA
Strubbe, K., & Gomes, W. (1993). BROMINE-METHANOL AS AN ETCHANT FOR SEMICONDUCTORS - A FUNDAMENTAL-STUDY ON GAP .1. ETCHING BEHAVIOR OF N-TYPE AND P-TYPE GAP. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 140(11), 3294–3300.
Vancouver
1.
Strubbe K, Gomes W. BROMINE-METHANOL AS AN ETCHANT FOR SEMICONDUCTORS - A FUNDAMENTAL-STUDY ON GAP .1. ETCHING BEHAVIOR OF N-TYPE AND P-TYPE GAP. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1993;140(11):3294–300.
MLA
Strubbe, Katrien, and Walter Gomes. “BROMINE-METHANOL AS AN ETCHANT FOR SEMICONDUCTORS - A FUNDAMENTAL-STUDY ON GAP .1. ETCHING BEHAVIOR OF N-TYPE AND P-TYPE GAP.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 140.11 (1993): 3294–3300. Print.
@article{203704,
  author       = {Strubbe, Katrien and Gomes, Walter},
  issn         = {0013-4651},
  journal      = {JOURNAL OF THE ELECTROCHEMICAL SOCIETY},
  language     = {eng},
  number       = {11},
  pages        = {3294--3300},
  title        = {BROMINE-METHANOL AS AN ETCHANT FOR SEMICONDUCTORS - A FUNDAMENTAL-STUDY ON GAP .1. ETCHING BEHAVIOR OF N-TYPE AND P-TYPE GAP.},
  volume       = {140},
  year         = {1993},
}