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Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit

Nannicha Hattasan UGent, Alban Gassenq UGent, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié and Günther Roelkens UGent (2011) IEEE PHOTONICS TECHNOLOGY LETTERS. 23(23). p.1760-1762
abstract
We report the integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit. The device operates with low dark current (1.13 mu A at -0.1 V) at room temperature. A high responsivity of 0.44 A/W is measured at 2.29 mu m. This yields 1.63 x 10(9) cmHz (1/2)/W of Johnson-noise-limited-detectivity.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
heterogeneous integration, GaInAsSb, photodiode, CHIP
journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
IEEE Photonics Technol. Lett.
volume
23
issue
23
pages
1760 - 1762
Web of Science type
Article
Web of Science id
000296737500006
JCR category
ENGINEERING, ELECTRICAL & ELECTRONIC
JCR impact factor
2.191 (2011)
JCR rank
42/244 (2011)
JCR quartile
1 (2011)
ISSN
1041-1135
DOI
10.1109/LPT.2011.2169244
project
Center for nano- and biophotonics (NB-Photonics)
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
2036342
handle
http://hdl.handle.net/1854/LU-2036342
date created
2012-02-17 09:25:48
date last changed
2013-02-27 09:00:52
@article{2036342,
  abstract     = {We report the integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit. The device operates with low dark current (1.13 mu A at -0.1 V) at room temperature. A high responsivity of 0.44 A/W is measured at 2.29 mu m. This yields 1.63 x 10(9) cmHz (1/2)/W of Johnson-noise-limited-detectivity.},
  author       = {Hattasan, Nannicha and Gassenq, Alban and Cerutti, Laurent and Rodriguez, Jean-Baptiste and Tourni{\'e}, Eric and Roelkens, G{\"u}nther},
  issn         = {1041-1135},
  journal      = {IEEE PHOTONICS TECHNOLOGY LETTERS},
  keyword      = {heterogeneous integration,GaInAsSb,photodiode,CHIP},
  language     = {eng},
  number       = {23},
  pages        = {1760--1762},
  title        = {Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit},
  url          = {http://dx.doi.org/10.1109/LPT.2011.2169244},
  volume       = {23},
  year         = {2011},
}

Chicago
Hattasan, Nannicha, Alban Gassenq, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié, and Günther Roelkens. 2011. “Heterogeneous Integration of GaInAsSb P-i-n Photodiodes on a Silicon-on-insulator Waveguide Circuit.” Ieee Photonics Technology Letters 23 (23): 1760–1762.
APA
Hattasan, N., Gassenq, A., Cerutti, L., Rodriguez, J.-B., Tournié, E., & Roelkens, G. (2011). Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit. IEEE PHOTONICS TECHNOLOGY LETTERS, 23(23), 1760–1762.
Vancouver
1.
Hattasan N, Gassenq A, Cerutti L, Rodriguez J-B, Tournié E, Roelkens G. Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit. IEEE PHOTONICS TECHNOLOGY LETTERS. 2011;23(23):1760–2.
MLA
Hattasan, Nannicha, Alban Gassenq, Laurent Cerutti, et al. “Heterogeneous Integration of GaInAsSb P-i-n Photodiodes on a Silicon-on-insulator Waveguide Circuit.” IEEE PHOTONICS TECHNOLOGY LETTERS 23.23 (2011): 1760–1762. Print.