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A deep-level transient spectroscopy study of implanted Ge p+n and n+p junctions by Pt-induced crystallization

(2011) ECS Transactions. 41(7). p.299-308
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Abstract
This paper reports on a Deep-Level Transient Spectroscopy (DLTS) study of ion-implanted Ge n(+)p and p(+)n junctions, subjected to a 350 degrees C anneal after Pt-metallization. It is shown that good quality diodes with acceptable reverse current levels can be achieved, pointing to a successful activation and defect removal, especially for the p(+)n junctions. Nevertheless, DLTS reveals the presence of small concentrations of deep levels, which can be associated with residual ion implantation damage and possibly Pt in-diffusion. In the case of the p(+)n diodes, the thermal activation energy of the leakage current increases from 0.38 eV to 0.45 eV, which could be in line with the annealing of the deep-level traps, observed in DLTS. The situation is more complex for the n(+)p junctions, where the low activation energy points to field-assisted leakage current mechanisms, which can be mediated by the residual implantation damage.
Keywords
DEFECTS, SEMICONDUCTORS, DIFFUSION, ACTIVATION, GERMANIUM, ELECTRONIC-PROPERTIES, SHALLOW JUNCTION, IRRADIATION, REGROWTH, DOPANTS

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Chicago
Simoen, E, Johan Lauwaert, Henk Vrielinck, V Ioannou-Sougleridis, and A Dimoulas. 2011. “A Deep-level Transient Spectroscopy Study of Implanted Ge P+n and N+p Junctions by Pt-induced Crystallization.” In ECS Transactions, ed. C Claeys, H Iwai, M Tao, S Deleonibus, and J Murota, 41:299–308. Pennington, NJ, USA: Electrochemical Society (ECS).
APA
Simoen, E, Lauwaert, J., Vrielinck, H., Ioannou-Sougleridis, V., & Dimoulas, A. (2011). A deep-level transient spectroscopy study of implanted Ge p+n and n+p junctions by Pt-induced crystallization. In C Claeys, H. Iwai, M. Tao, S. Deleonibus, & J. Murota (Eds.), ECS Transactions (Vol. 41, pp. 299–308). Presented at the 220th Electrochemical Society Meeting (ECS Fall 2011), Pennington, NJ, USA: Electrochemical Society (ECS).
Vancouver
1.
Simoen E, Lauwaert J, Vrielinck H, Ioannou-Sougleridis V, Dimoulas A. A deep-level transient spectroscopy study of implanted Ge p+n and n+p junctions by Pt-induced crystallization. In: Claeys C, Iwai H, Tao M, Deleonibus S, Murota J, editors. ECS Transactions. Pennington, NJ, USA: Electrochemical Society (ECS); 2011. p. 299–308.
MLA
Simoen, E, Johan Lauwaert, Henk Vrielinck, et al. “A Deep-level Transient Spectroscopy Study of Implanted Ge P+n and N+p Junctions by Pt-induced Crystallization.” ECS Transactions. Ed. C Claeys et al. Vol. 41. Pennington, NJ, USA: Electrochemical Society (ECS), 2011. 299–308. Print.
@inproceedings{2034324,
  abstract     = {This paper reports on a Deep-Level Transient Spectroscopy (DLTS) study of ion-implanted Ge n(+)p and p(+)n junctions, subjected to a 350 degrees C anneal after Pt-metallization. It is shown that good quality diodes with acceptable reverse current levels can be achieved, pointing to a successful activation and defect removal, especially for the p(+)n junctions. Nevertheless, DLTS reveals the presence of small concentrations of deep levels, which can be associated with residual ion implantation damage and possibly Pt in-diffusion. In the case of the p(+)n diodes, the thermal activation energy of the leakage current increases from 0.38 eV to 0.45 eV, which could be in line with the annealing of the deep-level traps, observed in DLTS. The situation is more complex for the n(+)p junctions, where the low activation energy points to field-assisted leakage current mechanisms, which can be mediated by the residual implantation damage.},
  author       = {Simoen, E and Lauwaert, Johan and Vrielinck, Henk and Ioannou-Sougleridis, V and Dimoulas, A},
  booktitle    = {ECS Transactions},
  editor       = {Claeys, C and Iwai, H and Tao, M and Deleonibus, S and Murota, J},
  isbn         = {9781607682615},
  issn         = {1938-5862},
  keyword      = {DEFECTS,SEMICONDUCTORS,DIFFUSION,ACTIVATION,GERMANIUM,ELECTRONIC-PROPERTIES,SHALLOW JUNCTION,IRRADIATION,REGROWTH,DOPANTS},
  language     = {eng},
  location     = {Boston, MA, USA},
  number       = {7},
  pages        = {299--308},
  publisher    = {Electrochemical Society (ECS)},
  title        = {A deep-level transient spectroscopy study of implanted Ge p+n and n+p junctions by Pt-induced crystallization},
  url          = {http://dx.doi.org/10.1149/1.3633310},
  volume       = {41},
  year         = {2011},
}

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