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STUDY OF ELECTRICALLY ACTIVE LATTICE-DEFECTS IN CF-252 AND PROTON IRRADIATED SILICON DIODES.

MA TRAUWAERT, J VANHELLEMONT, E SIMOEN, C CLAEYS, B JOHLANDER, L ADAMS and Paul Clauws (1992) IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 39(6) 1747-1753 Part 1).
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
IEEE Trans. Nucl. Sci.
volume
39
issue
6) 1747-1753 Part 1
Web of Science type
Article
ISSN
0018-9499
language
English
UGent publication?
yes
classification
A1
id
200953
handle
http://hdl.handle.net/1854/LU-200953
date created
2004-01-14 13:42:00
date last changed
2016-12-19 15:38:50
@article{200953,
  author       = {TRAUWAERT, MA and VANHELLEMONT, J and SIMOEN, E and CLAEYS, C and JOHLANDER, B and ADAMS, L and Clauws, Paul},
  issn         = {0018-9499},
  journal      = {IEEE TRANSACTIONS ON NUCLEAR SCIENCE},
  language     = {eng},
  number       = {6) 1747-1753 Part 1},
  title        = {STUDY OF ELECTRICALLY ACTIVE LATTICE-DEFECTS IN CF-252 AND PROTON IRRADIATED SILICON DIODES.},
  volume       = {39},
  year         = {1992},
}

Chicago
TRAUWAERT, MA, J VANHELLEMONT, E SIMOEN, C CLAEYS, B JOHLANDER, L ADAMS, and Paul Clauws. 1992. “STUDY OF ELECTRICALLY ACTIVE LATTICE-DEFECTS IN CF-252 AND PROTON IRRADIATED SILICON DIODES.” Ieee Transactions on Nuclear Science 39 (6) 1747-1753 Part 1).
APA
TRAUWAERT, M., VANHELLEMONT, J., SIMOEN, E., CLAEYS, C., JOHLANDER, B., ADAMS, L., & Clauws, P. (1992). STUDY OF ELECTRICALLY ACTIVE LATTICE-DEFECTS IN CF-252 AND PROTON IRRADIATED SILICON DIODES. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 39(6) 1747-1753 Part 1).
Vancouver
1.
TRAUWAERT M, VANHELLEMONT J, SIMOEN E, CLAEYS C, JOHLANDER B, ADAMS L, et al. STUDY OF ELECTRICALLY ACTIVE LATTICE-DEFECTS IN CF-252 AND PROTON IRRADIATED SILICON DIODES. IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 1992;39(6) 1747-1753 Part 1).
MLA
TRAUWAERT, MA, J VANHELLEMONT, E SIMOEN, et al. “STUDY OF ELECTRICALLY ACTIVE LATTICE-DEFECTS IN CF-252 AND PROTON IRRADIATED SILICON DIODES.” IEEE TRANSACTIONS ON NUCLEAR SCIENCE 39.6) 1747-1753 Part 1 (1992): n. pag. Print.