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FAST DEGRADATION OF BORON-DOPED STRAINED SI(1-X)GEX LAYERS BY 1-MEV ELECTRON-IRRADIATION.

(1993) APPLIED PHYSICS LETTERS. 62(3). p.309-311
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Chicago
VANHELLEMONT, J, MA TRAUWAERT, J POORTMANS, M CAYMAX, and Paul Clauws. 1993. “FAST DEGRADATION OF BORON-DOPED STRAINED SI(1-X)GEX LAYERS BY 1-MEV ELECTRON-IRRADIATION.” Applied Physics Letters 62 (3): 309–311.
APA
VANHELLEMONT, J., TRAUWAERT, M., POORTMANS, J., CAYMAX, M., & Clauws, P. (1993). FAST DEGRADATION OF BORON-DOPED STRAINED SI(1-X)GEX LAYERS BY 1-MEV ELECTRON-IRRADIATION. APPLIED PHYSICS LETTERS, 62(3), 309–311.
Vancouver
1.
VANHELLEMONT J, TRAUWAERT M, POORTMANS J, CAYMAX M, Clauws P. FAST DEGRADATION OF BORON-DOPED STRAINED SI(1-X)GEX LAYERS BY 1-MEV ELECTRON-IRRADIATION. APPLIED PHYSICS LETTERS. 1993;62(3):309–11.
MLA
VANHELLEMONT, J, MA TRAUWAERT, J POORTMANS, et al. “FAST DEGRADATION OF BORON-DOPED STRAINED SI(1-X)GEX LAYERS BY 1-MEV ELECTRON-IRRADIATION.” APPLIED PHYSICS LETTERS 62.3 (1993): 309–311. Print.
@article{200546,
  author       = {VANHELLEMONT, J and TRAUWAERT, MA and POORTMANS, J and CAYMAX, M and Clauws, Paul},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  language     = {eng},
  number       = {3},
  pages        = {309--311},
  title        = {FAST DEGRADATION OF BORON-DOPED STRAINED SI(1-X)GEX LAYERS BY 1-MEV ELECTRON-IRRADIATION.},
  volume       = {62},
  year         = {1993},
}