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III-V on dissimilar substrates: epitaxy and alternatives

Author
Organization
Abstract
Heteroepitaxial growth and thin film transfer are two techniques for the integration of III-V technologies on dissimilar substrates. Crystalline quality remains the issue for heteroepitaxial layers of III-V's on Si. Quality improving techniques are discussed. Stress in the thin epitaxial film is another point of concern but recent progress has alleviated this problem to some extend. Thin film transfer technology is currently tackling more processing and yield related issues and its maturity is making it a competing or complementary alternative to thin-film growth. For some very appealing applications thin-film transfer is the only solution, offering high flexibility and exciting combinations.
Keywords
OPERATION, SILICON, FABRICATION, FILMS, GROWTH, LIFT-OFF, HETEROSTRUCTURE LASERS, SI SUBSTRATE, MOLECULAR-BEAM EPITAXY, HIGH-QUALITY GAAS

Citation

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Chicago
Borghs, G, J De Boeck, Ivan Pollentier, Piet Demeester, Catherine Brys, and Wouter Dobbelaere. 1994. “III-V on Dissimilar Substrates: Epitaxy and Alternatives.” Institute of Physics Conference Series 136: 441–448.
APA
Borghs, G., De Boeck, J., Pollentier, I., Demeester, P., Brys, C., & Dobbelaere, W. (1994). III-V on dissimilar substrates: epitaxy and alternatives. Institute of Physics Conference Series, 136, 441–448. Presented at the 20th International symposium on Gallium Arsenide and Related Compounds.
Vancouver
1.
Borghs G, De Boeck J, Pollentier I, Demeester P, Brys C, Dobbelaere W. III-V on dissimilar substrates: epitaxy and alternatives. Institute of Physics Conference Series. 1994;136:441–8.
MLA
Borghs, G, J De Boeck, Ivan Pollentier, et al. “III-V on Dissimilar Substrates: Epitaxy and Alternatives.” Institute of Physics Conference Series 136 (1994): 441–448. Print.
@article{199865,
  abstract     = {Heteroepitaxial growth and thin film transfer are two techniques for the integration of III-V technologies on dissimilar substrates. Crystalline quality remains the issue for heteroepitaxial layers of III-V's on Si. Quality improving techniques are discussed. Stress in the thin epitaxial film is another point of concern but recent progress has alleviated this problem to some extend. 
Thin film transfer technology is currently tackling more processing and yield related issues and its maturity is making it a competing or complementary alternative to thin-film growth. For some very appealing applications thin-film transfer is the only solution, offering high flexibility and exciting combinations.},
  author       = {Borghs, G and De Boeck, J and Pollentier, Ivan and Demeester, Piet and Brys, Catherine and Dobbelaere, Wouter},
  issn         = {0951-3248},
  journal      = {Institute of Physics Conference Series},
  keyword      = {OPERATION,SILICON,FABRICATION,FILMS,GROWTH,LIFT-OFF,HETEROSTRUCTURE LASERS,SI SUBSTRATE,MOLECULAR-BEAM EPITAXY,HIGH-QUALITY GAAS},
  language     = {eng},
  location     = {Freiburg, Germany},
  pages        = {441--448},
  title        = {III-V on dissimilar substrates: epitaxy and alternatives},
  volume       = {136},
  year         = {1994},
}