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Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks

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FWO - G.0207.10N : Study of the Properties of Intrinsic Point Defects in Monocrystalline Germanium
Abstract
Firing impacts on surface passivation provided by a SiO2 and SiO2/SiNx stack with evaporated Al films are studied by capacitance-based techniques on MIS capacitors. For devices with insulator layers consisting solely of as-deposited SiO2, the densities of either interface states (Dit) or fixed charges (Qfc) are hardly influenced by firing. Capping the SiO2 layer with a SiNx layer results in a shift of the peak activation energy of Dit toward the valence band (Ev) of Si. Firing this SiO2/SiNx stack leads to an increase of Qfc, a reduction of Dit, and a moderate shift of peak activation energy of Dit toward Ev. Co-firing with the Al film on top significantly reduces the Qfc, Dit, and Dit peak activation energy, which is resulting from the atomic hydrogen passivation. These results are of particular interest for the development of solar cells with rear surface passivation and local contacts.
Keywords
SILICON SOLAR-CELLS, RECOMBINATION VELOCITY, Interface states, Firing, Crystalline silicon, Surface passivation, TEMPERATURE, TRANSISTORS, STATES, FILMS

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Citation

Please use this url to cite or link to this publication:

Chicago
Chen, Jiahe, E Cornagliotti, X Loozen, E Simoen, Jan Vanhellemont, Johan Lauwaert, Henk Vrielinck, and J Poortmans. 2011. “Impact of Firing on Surface Passivation of p-Si by SiO2/Al and SiO2/SiNx/Al Stacks.” Journal of Applied Physics 110 (12).
APA
Chen, Jiahe, Cornagliotti, E., Loozen, X., Simoen, E., Vanhellemont, J., Lauwaert, J., Vrielinck, H., et al. (2011). Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks. JOURNAL OF APPLIED PHYSICS, 110(12).
Vancouver
1.
Chen J, Cornagliotti E, Loozen X, Simoen E, Vanhellemont J, Lauwaert J, et al. Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks. JOURNAL OF APPLIED PHYSICS. 2011;110(12).
MLA
Chen, Jiahe, E Cornagliotti, X Loozen, et al. “Impact of Firing on Surface Passivation of p-Si by SiO2/Al and SiO2/SiNx/Al Stacks.” JOURNAL OF APPLIED PHYSICS 110.12 (2011): n. pag. Print.
@article{1991950,
  abstract     = {Firing impacts on surface passivation provided by a SiO2 and SiO2/SiNx stack with evaporated Al films are studied by capacitance-based techniques on MIS capacitors. For devices with insulator layers consisting solely of as-deposited SiO2, the densities of either interface states (Dit) or fixed
charges (Qfc) are hardly influenced by firing. Capping the SiO2 layer with a SiNx layer results in a shift of the peak activation energy of Dit toward the valence band (Ev) of Si. Firing this SiO2/SiNx stack leads to an increase of Qfc, a reduction of Dit, and a moderate shift of peak activation energy of Dit toward Ev. Co-firing with the Al film on top significantly reduces the Qfc, Dit, and Dit peak activation energy, which is resulting from the atomic hydrogen passivation. These results are of particular interest for the development of solar cells with rear surface passivation and local contacts.},
  articleno    = {126101},
  author       = {Chen, Jiahe and Cornagliotti, E and Loozen, X and Simoen, E and Vanhellemont, Jan and Lauwaert, Johan and Vrielinck, Henk and Poortmans, J},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  keyword      = {SILICON SOLAR-CELLS,RECOMBINATION VELOCITY,Interface states,Firing,Crystalline silicon,Surface passivation,TEMPERATURE,TRANSISTORS,STATES,FILMS},
  language     = {eng},
  number       = {12},
  pages        = {3},
  title        = {Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks},
  url          = {http://dx.doi.org/10.1063/1.3669405},
  volume       = {110},
  year         = {2011},
}

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