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Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks

Jiahe Chen, E Cornagliotti, X Loozen, E Simoen, Jan Vanhellemont UGent, Johan Lauwaert UGent, Henk Vrielinck UGent and J Poortmans (2011) JOURNAL OF APPLIED PHYSICS. 110(12).
abstract
Firing impacts on surface passivation provided by a SiO2 and SiO2/SiNx stack with evaporated Al films are studied by capacitance-based techniques on MIS capacitors. For devices with insulator layers consisting solely of as-deposited SiO2, the densities of either interface states (Dit) or fixed charges (Qfc) are hardly influenced by firing. Capping the SiO2 layer with a SiNx layer results in a shift of the peak activation energy of Dit toward the valence band (Ev) of Si. Firing this SiO2/SiNx stack leads to an increase of Qfc, a reduction of Dit, and a moderate shift of peak activation energy of Dit toward Ev. Co-firing with the Al film on top significantly reduces the Qfc, Dit, and Dit peak activation energy, which is resulting from the atomic hydrogen passivation. These results are of particular interest for the development of solar cells with rear surface passivation and local contacts.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
Surface passivation, Crystalline silicon, Firing, Interface states, SILICON SOLAR-CELLS, RECOMBINATION VELOCITY, TEMPERATURE, TRANSISTORS, STATES, FILMS
journal title
JOURNAL OF APPLIED PHYSICS
J. Appl. Phys.
volume
110
issue
12
article_number
126101
pages
3 pages
Web of Science type
Article
Web of Science id
000298639800150
JCR category
PHYSICS, APPLIED
JCR impact factor
2.168 (2011)
JCR rank
37/124 (2011)
JCR quartile
2 (2011)
ISSN
0021-8979
DOI
10.1063/1.3669405]
project
FWO - G.0207.10N : Study of the Properties of Intrinsic Point Defects in Monocrystalline Germanium
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1991950
handle
http://hdl.handle.net/1854/LU-1991950
date created
2012-01-18 08:38:09
date last changed
2012-10-02 16:15:17
@article{1991950,
  abstract     = {Firing impacts on surface passivation provided by a SiO2 and SiO2/SiNx stack with evaporated Al films are studied by capacitance-based techniques on MIS capacitors. For devices with insulator layers consisting solely of as-deposited SiO2, the densities of either interface states (Dit) or fixed
charges (Qfc) are hardly influenced by firing. Capping the SiO2 layer with a SiNx layer results in a shift of the peak activation energy of Dit toward the valence band (Ev) of Si. Firing this SiO2/SiNx stack leads to an increase of Qfc, a reduction of Dit, and a moderate shift of peak activation energy of Dit toward Ev. Co-firing with the Al film on top significantly reduces the Qfc, Dit, and Dit peak activation energy, which is resulting from the atomic hydrogen passivation. These results are of particular interest for the development of solar cells with rear surface passivation and local contacts.},
  articleno    = {126101},
  author       = {Chen, Jiahe and Cornagliotti, E and Loozen, X and Simoen, E and Vanhellemont, Jan and Lauwaert, Johan and Vrielinck, Henk and Poortmans, J},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  keyword      = {Surface passivation,Crystalline silicon,Firing,Interface states,SILICON SOLAR-CELLS,RECOMBINATION VELOCITY,TEMPERATURE,TRANSISTORS,STATES,FILMS},
  language     = {eng},
  number       = {12},
  pages        = {3},
  title        = {Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks},
  url          = {http://dx.doi.org/10.1063/1.3669405]},
  volume       = {110},
  year         = {2011},
}

Chicago
Chen, Jiahe, E Cornagliotti, X Loozen, E Simoen, Jan Vanhellemont, Johan Lauwaert, Henk Vrielinck, and J Poortmans. 2011. “Impact of Firing on Surface Passivation of p-Si by SiO2/Al and SiO2/SiNx/Al Stacks.” Journal of Applied Physics 110 (12).
APA
Chen, Jiahe, Cornagliotti, E., Loozen, X., Simoen, E., Vanhellemont, J., Lauwaert, J., Vrielinck, H., et al. (2011). Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks. JOURNAL OF APPLIED PHYSICS, 110(12).
Vancouver
1.
Chen J, Cornagliotti E, Loozen X, Simoen E, Vanhellemont J, Lauwaert J, et al. Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks. JOURNAL OF APPLIED PHYSICS. 2011;110(12).
MLA
Chen, Jiahe, E Cornagliotti, X Loozen, et al. “Impact of Firing on Surface Passivation of p-Si by SiO2/Al and SiO2/SiNx/Al Stacks.” JOURNAL OF APPLIED PHYSICS 110.12 (2011): n. pag. Print.