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Influence of defect passivation by hydrogen on the Schottky-barrier height of GaAs and InP contracts.

(1994) JOURNAL OF APPLIED PHYSICS. 76(1). p.403-406
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Chicago
Vanmeirhaeghe, Roland, Willy Laflere, and Felix Cardon. 1994. “Influence of Defect Passivation by Hydrogen on the Schottky-barrier Height of GaAs and InP Contracts.” Journal of Applied Physics 76 (1): 403–406.
APA
Vanmeirhaeghe, R., Laflere, W., & Cardon, F. (1994). Influence of defect passivation by hydrogen on the Schottky-barrier height of GaAs and InP contracts. JOURNAL OF APPLIED PHYSICS, 76(1), 403–406.
Vancouver
1.
Vanmeirhaeghe R, Laflere W, Cardon F. Influence of defect passivation by hydrogen on the Schottky-barrier height of GaAs and InP contracts. JOURNAL OF APPLIED PHYSICS. 1994;76(1):403–6.
MLA
Vanmeirhaeghe, Roland, Willy Laflere, and Felix Cardon. “Influence of Defect Passivation by Hydrogen on the Schottky-barrier Height of GaAs and InP Contracts.” JOURNAL OF APPLIED PHYSICS 76.1 (1994): 403–406. Print.
@article{198553,
  author       = {Vanmeirhaeghe, Roland and Laflere, Willy and Cardon, Felix},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  language     = {eng},
  number       = {1},
  pages        = {403--406},
  title        = {Influence of defect passivation by hydrogen on the Schottky-barrier height of GaAs and InP contracts.},
  volume       = {76},
  year         = {1994},
}