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Low-temperature and low-voltage, solution-processed metal oxide n-TFTs and flexible circuitry on large-area polyimide foil

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Abstract
In this article, we report on high-performance solution-based n-type metal oxide TFTs processed directly on polyimide foil and annealed at 250 °C. Saturation mobilities exceeding 2 cm²/(Vs) and Ion/Ioff ratios beyond 108 have been achieved. Using these oxide n-TFTs, fast and low-voltage flexible circuitry is presented. Furthermore, a complete 8-bit RFID transponder chip, containing 294 oxide n-TFTs has been fabricated. Both high-speed and low-voltage operation makes the presented oxide n-TFT technology suited for both the pixel driving and embedded line-drive circuitry at the borders of flexible AMOLED displays.

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MLA
Rockelé, Maarten, Duy-Vu Pham, Jürgen Steiger, et al. “Low-temperature and Low-voltage, Solution-processed Metal Oxide n-TFTs and Flexible Circuitry on Large-area Polyimide Foil.” IDW : Proceedings of the International Display Workshops. Society for Information Display (SID), 2011. 1267–1270. Print.
APA
Rockelé, M., Pham, D.-V., Steiger, J., Botnaras, S., Weber, D., Vanfleteren, J., Sterken, T., et al. (2011). Low-temperature and low-voltage, solution-processed metal oxide n-TFTs and flexible circuitry on large-area polyimide foil. IDW : proceedings of the international display workshops (pp. 1267–1270). Presented at the International Display Workshops 2011 (IDW  ’11), Society for Information Display (SID).
Chicago author-date
Rockelé, Maarten, Duy-Vu Pham, Jürgen Steiger, Silviu Botnaras, Dennis Weber, Jan Vanfleteren, Tom Sterken, et al. 2011. “Low-temperature and Low-voltage, Solution-processed Metal Oxide n-TFTs and Flexible Circuitry on Large-area Polyimide Foil.” In IDW : Proceedings of the International Display Workshops, 1267–1270. Society for Information Display (SID).
Chicago author-date (all authors)
Rockelé, Maarten, Duy-Vu Pham, Jürgen Steiger, Silviu Botnaras, Dennis Weber, Jan Vanfleteren, Tom Sterken, Dieter Cuypers, Soeren Steudel, Kris Myny, Sarah Schols, Bas van der Putten, Jan Genoe, and Paul Heremans. 2011. “Low-temperature and Low-voltage, Solution-processed Metal Oxide n-TFTs and Flexible Circuitry on Large-area Polyimide Foil.” In IDW : Proceedings of the International Display Workshops, 1267–1270. Society for Information Display (SID).
Vancouver
1.
Rockelé M, Pham D-V, Steiger J, Botnaras S, Weber D, Vanfleteren J, et al. Low-temperature and low-voltage, solution-processed metal oxide n-TFTs and flexible circuitry on large-area polyimide foil. IDW : proceedings of the international display workshops. Society for Information Display (SID); 2011. p. 1267–70.
IEEE
[1]
M. Rockelé et al., “Low-temperature and low-voltage, solution-processed metal oxide n-TFTs and flexible circuitry on large-area polyimide foil,” in IDW : proceedings of the international display workshops, Nagoya, Japan, 2011, pp. 1267–1270.
@inproceedings{1984357,
  abstract     = {In this article, we report on high-performance solution-based n-type metal oxide TFTs processed directly on polyimide foil and annealed at 250 °C. Saturation mobilities exceeding 2 cm²/(Vs) and Ion/Ioff ratios beyond 108 have been achieved. Using these oxide n-TFTs, fast and low-voltage flexible circuitry is presented. Furthermore, a complete 8-bit RFID transponder chip, containing 294 oxide n-TFTs has been fabricated. Both high-speed and low-voltage operation makes the presented oxide n-TFT technology suited for both the pixel driving and embedded line-drive circuitry at the borders of flexible AMOLED displays.},
  articleno    = {FLX1/AMD2-2},
  author       = {Rockelé, Maarten and Pham, Duy-Vu and Steiger, Jürgen and  Botnaras, Silviu and Weber, Dennis and Vanfleteren, Jan and Sterken, Tom and Cuypers, Dieter and Steudel, Soeren and Myny, Kris and Schols, Sarah and van der Putten, Bas and Genoe, Jan and Heremans, Paul},
  booktitle    = {IDW : proceedings of the international display workshops},
  issn         = {1883-2490},
  language     = {eng},
  location     = {Nagoya, Japan},
  pages        = {FLX1/AMD2-2:1267--FLX1/AMD2-2:1270},
  publisher    = {Society for Information Display (SID)},
  title        = {Low-temperature and low-voltage, solution-processed metal oxide n-TFTs and flexible circuitry on large-area polyimide foil},
  year         = {2011},
}