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Electrical characteristics of Al/Si02/n-Si tunnel-diodes with an oxide layer grown by rapid thermal-oxidation.

(1994) SOLID-STATE ELECTRONICS. 37(3). p.433-441
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Chicago
Depas, Michel, Roland Vanmeirhaeghe, Willy Laflere, and Felix Cardon. 1994. “Electrical Characteristics of Al/Si02/n-Si Tunnel-diodes with an Oxide Layer Grown by Rapid Thermal-oxidation.” Solid-state Electronics 37 (3): 433–441.
APA
Depas, M., Vanmeirhaeghe, R., Laflere, W., & Cardon, F. (1994). Electrical characteristics of Al/Si02/n-Si tunnel-diodes with an oxide layer grown by rapid thermal-oxidation. SOLID-STATE ELECTRONICS, 37(3), 433–441.
Vancouver
1.
Depas M, Vanmeirhaeghe R, Laflere W, Cardon F. Electrical characteristics of Al/Si02/n-Si tunnel-diodes with an oxide layer grown by rapid thermal-oxidation. SOLID-STATE ELECTRONICS. 1994;37(3):433–41.
MLA
Depas, Michel, Roland Vanmeirhaeghe, Willy Laflere, et al. “Electrical Characteristics of Al/Si02/n-Si Tunnel-diodes with an Oxide Layer Grown by Rapid Thermal-oxidation.” SOLID-STATE ELECTRONICS 37.3 (1994): 433–441. Print.
@article{197085,
  author       = {Depas, Michel and Vanmeirhaeghe, Roland and Laflere, Willy and Cardon, Felix},
  issn         = {0038-1101},
  journal      = {SOLID-STATE ELECTRONICS},
  language     = {eng},
  number       = {3},
  pages        = {433--441},
  title        = {Electrical characteristics of Al/Si02/n-Si tunnel-diodes with an oxide layer grown by rapid thermal-oxidation.},
  volume       = {37},
  year         = {1994},
}