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Simulations of nanograting-assisted light coupling in GaN planar waveguide

R Dylewicz, RA Hogg, R Airey, R Paszkiewicz, Peter Bienstman UGent and S Patela (2011) OPTICAL AND QUANTUM ELECTRONICS. 42(9-10). p.619-629
abstract
The numerical simulations of nanogratings integrated with gallium nitride (GaN) planar waveguides as well as the experimental in-coupling results are presented. A simulation tool based on the eigenmode expansion method and advanced boundary conditions provided a rigorous model of 400-nm-period grating couplers. A full-vectorial Maxwell solver allowed performing a number of simulations with varying grating parameters, where coupling efficiency, reflection and transmission characteristics of device were calculated. Gratings with different etch depths and arbitrary shapes were simulated using a staircase approximation, with an optimized number of steps per single slope. For the first time, an impact of dry etch processing on GaN coupler efficiency was evaluated, due to the inclusion of the sloped sidewalls, with regard to the technological constrains. Finally, the experimental results in the visible spectrum region (lambda = 633 nm), for 400-nm-deep gratings etched in GaN waveguide, were presented together with theoretical data for binary and trapezoidal profiles of a grating, for different optical mode profiles (TE(0) divided by TE(3) modes).
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
Gallium nitride, Grating coupler, Planar waveguide, Integrated optics, Numerical simulations, Dry etching process, Semiconductor processing, III-V semiconductor materials, GRATING COUPLER, DIELECTRIC GRATINGS, EMITTING-DIODES, EXCITATION, SCATTERING, EFFICIENCY, DESIGN, LAYERS
journal title
OPTICAL AND QUANTUM ELECTRONICS
Opt. Quantum Electron.
volume
42
issue
9-10
pages
619 - 629
Web of Science type
Article
Web of Science id
000294755600005
JCR category
ENGINEERING, ELECTRICAL & ELECTRONIC
JCR impact factor
0.822 (2011)
JCR rank
149/244 (2011)
JCR quartile
3 (2011)
ISSN
0306-8919
DOI
10.1007/s11082-011-9485-4
project
Center for nano- and biophotonics (NB-Photonics)
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1961743
handle
http://hdl.handle.net/1854/LU-1961743
date created
2011-12-07 11:44:04
date last changed
2016-12-19 15:46:20
@article{1961743,
  abstract     = {The numerical simulations of nanogratings integrated with gallium nitride (GaN) planar waveguides as well as the experimental in-coupling results are presented. A simulation tool based on the eigenmode expansion method and advanced boundary conditions provided a rigorous model of 400-nm-period grating couplers. A full-vectorial Maxwell solver allowed performing a number of simulations with varying grating parameters, where coupling efficiency, reflection and transmission characteristics of device were calculated. Gratings with different etch depths and arbitrary shapes were simulated using a staircase approximation, with an optimized number of steps per single slope. For the first time, an impact of dry etch processing on GaN coupler efficiency was evaluated, due to the inclusion of the sloped sidewalls, with regard to the technological constrains. Finally, the experimental results in the visible spectrum region (lambda = 633 nm), for 400-nm-deep gratings etched in GaN waveguide, were presented together with theoretical data for binary and trapezoidal profiles of a grating, for different optical mode profiles (TE(0) divided by TE(3) modes).},
  author       = {Dylewicz, R and Hogg, RA and Airey, R and Paszkiewicz, R and Bienstman, Peter and Patela, S},
  issn         = {0306-8919},
  journal      = {OPTICAL AND QUANTUM ELECTRONICS},
  keyword      = {Gallium nitride,Grating coupler,Planar waveguide,Integrated optics,Numerical simulations,Dry etching process,Semiconductor processing,III-V semiconductor materials,GRATING COUPLER,DIELECTRIC GRATINGS,EMITTING-DIODES,EXCITATION,SCATTERING,EFFICIENCY,DESIGN,LAYERS},
  language     = {eng},
  number       = {9-10},
  pages        = {619--629},
  title        = {Simulations of nanograting-assisted light coupling in GaN planar waveguide},
  url          = {http://dx.doi.org/10.1007/s11082-011-9485-4},
  volume       = {42},
  year         = {2011},
}

Chicago
Dylewicz, R, RA Hogg, R Airey, R Paszkiewicz, Peter Bienstman, and S Patela. 2011. “Simulations of Nanograting-assisted Light Coupling in GaN Planar Waveguide.” Optical and Quantum Electronics 42 (9-10): 619–629.
APA
Dylewicz, R., Hogg, R., Airey, R., Paszkiewicz, R., Bienstman, P., & Patela, S. (2011). Simulations of nanograting-assisted light coupling in GaN planar waveguide. OPTICAL AND QUANTUM ELECTRONICS, 42(9-10), 619–629.
Vancouver
1.
Dylewicz R, Hogg R, Airey R, Paszkiewicz R, Bienstman P, Patela S. Simulations of nanograting-assisted light coupling in GaN planar waveguide. OPTICAL AND QUANTUM ELECTRONICS. 2011;42(9-10):619–29.
MLA
Dylewicz, R, RA Hogg, R Airey, et al. “Simulations of Nanograting-assisted Light Coupling in GaN Planar Waveguide.” OPTICAL AND QUANTUM ELECTRONICS 42.9-10 (2011): 619–629. Print.