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Comparative study of carrier lifetime variation with doping in Si and Ge

Eugenijus Gaubas and Jan Vanhellemont UGent (2006) Meeting Abstracts Electrochemical Society. MA2006-02.
Please use this url to cite or link to this publication:
author
organization
year
type
conference
publication status
published
subject
in
Meeting Abstracts Electrochemical Society
Meet. Abstr. - Electrochem. Soc.
volume
MA2006-02
issue title
E7 - High purity silicon 9
article number
abstract 1233
conference name
210th ECS Meeting : E7 - High Purity Silicon 9
conference location
Cancún, Mexico
conference start
2006-10-29
conference end
2006-11-03
ISSN
1091-8213
language
English
UGent publication?
yes
classification
C3
copyright statement
I have transferred the copyright for this publication to the publisher
id
1959604
handle
http://hdl.handle.net/1854/LU-1959604
alternative location
http://www.ecsdl.org/vsearch/servlet/VerityServlet?KEY=MAECES&ONLINE=YES&smode=strresults&sort=rel&maxdisp=25&threshold=0&pjournals=MAECES&possible1zone=article&possible4=vanhellemont&possible4zone=author&bool4=and&fromyear=2006&toyear=2006&OUTLOG=NO&viewabs=MAECES&key=DISPLAY&docID=2&page=1&chapter=0
date created
2011-12-03 15:37:32
date last changed
2016-12-21 15:41:02
@inproceedings{1959604,
  articleno    = {abstract 1233},
  author       = {Gaubas, Eugenijus and Vanhellemont, Jan},
  booktitle    = {Meeting Abstracts Electrochemical Society},
  issn         = {1091-8213},
  language     = {eng},
  location     = {Canc{\'u}n, Mexico},
  title        = {Comparative study of carrier lifetime variation with doping in Si and Ge},
  url          = {http://www.ecsdl.org/vsearch/servlet/VerityServlet?KEY=MAECES\&ONLINE=YES\&smode=strresults\&sort=rel\&maxdisp=25\&threshold=0\&pjournals=MAECES\&possible1zone=article\&possible4=vanhellemont\&possible4zone=author\&bool4=and\&fromyear=2006\&toyear=2006\&OUTLOG=NO\&viewabs=MAECES\&key=DISPLAY\&docID=2\&page=1\&chapter=0},
  volume       = {MA2006-02},
  year         = {2006},
}

Chicago
Gaubas, Eugenijus, and Jan Vanhellemont. 2006. “Comparative Study of Carrier Lifetime Variation with Doping in Si and Ge.” In Meeting Abstracts Electrochemical Society. Vol. MA2006–02.
APA
Gaubas, Eugenijus, & Vanhellemont, J. (2006). Comparative study of carrier lifetime variation with doping in Si and Ge. Meeting Abstracts Electrochemical Society (Vol. MA2006–02). Presented at the 210th ECS Meeting : E7 - High Purity Silicon 9.
Vancouver
1.
Gaubas E, Vanhellemont J. Comparative study of carrier lifetime variation with doping in Si and Ge. Meeting Abstracts Electrochemical Society. 2006.
MLA
Gaubas, Eugenijus, and Jan Vanhellemont. “Comparative Study of Carrier Lifetime Variation with Doping in Si and Ge.” Meeting Abstracts Electrochemical Society. Vol. MA2006–02. 2006. Print.