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Comparative study of carrier lifetime variation with doping in Si and Ge

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Chicago
Gaubas, Eugenijus, and Jan Vanhellemont. 2006. “Comparative Study of Carrier Lifetime Variation with Doping in Si and Ge.” In Meeting Abstracts Electrochemical Society. Vol. MA2006–02.
APA
Gaubas, Eugenijus, & Vanhellemont, J. (2006). Comparative study of carrier lifetime variation with doping in Si and Ge. Meeting Abstracts Electrochemical Society (Vol. MA2006–02). Presented at the 210th ECS Meeting : E7 - High Purity Silicon 9.
Vancouver
1.
Gaubas E, Vanhellemont J. Comparative study of carrier lifetime variation with doping in Si and Ge. Meeting Abstracts Electrochemical Society. 2006.
MLA
Gaubas, Eugenijus, and Jan Vanhellemont. “Comparative Study of Carrier Lifetime Variation with Doping in Si and Ge.” Meeting Abstracts Electrochemical Society. Vol. MA2006–02. 2006. Print.
@inproceedings{1959604,
  articleno    = {abstract 1233},
  author       = {Gaubas, Eugenijus and Vanhellemont, Jan},
  booktitle    = {Meeting Abstracts Electrochemical Society},
  issn         = {1091-8213},
  language     = {eng},
  location     = {Canc{\'u}n, Mexico},
  title        = {Comparative study of carrier lifetime variation with doping in Si and Ge},
  url          = {http://www.ecsdl.org/vsearch/servlet/VerityServlet?KEY=MAECES\&ONLINE=YES\&smode=strresults\&sort=rel\&maxdisp=25\&threshold=0\&pjournals=MAECES\&possible1zone=article\&possible4=vanhellemont\&possible4zone=author\&bool4=and\&fromyear=2006\&toyear=2006\&OUTLOG=NO\&viewabs=MAECES\&key=DISPLAY\&docID=2\&page=1\&chapter=0},
  volume       = {MA2006-02},
  year         = {2006},
}