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Comparative study of carrier lifetime variations with doping in Si and Ge

(2006) ECS Transactions. 3(4). p.339-350
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Chicago
Gaubas, Eugenijus, and Jan Vanhellemont. 2006. “Comparative Study of Carrier Lifetime Variations with Doping in Si and Ge.” In ECS Transactions, 3:339–350.
APA
Gaubas, Eugenijus, & Vanhellemont, J. (2006). Comparative study of carrier lifetime variations with doping in Si and Ge. ECS Transactions (Vol. 3, pp. 339–350). Presented at the 210th ECS Meeting : High Purity Silicon 9.
Vancouver
1.
Gaubas E, Vanhellemont J. Comparative study of carrier lifetime variations with doping in Si and Ge. ECS Transactions. 2006. p. 339–50.
MLA
Gaubas, Eugenijus, and Jan Vanhellemont. “Comparative Study of Carrier Lifetime Variations with Doping in Si and Ge.” ECS Transactions. Vol. 3. 2006. 339–350. Print.
@inproceedings{1959600,
  author       = {Gaubas, Eugenijus and Vanhellemont, Jan},
  booktitle    = {ECS Transactions},
  issn         = {2151-2043},
  language     = {eng},
  location     = {Canc{\'u}n, Mexico},
  number       = {4},
  pages        = {339--350},
  title        = {Comparative study of carrier lifetime variations with doping in Si and Ge},
  url          = {http://dx.doi.org/10.1149/1.2355768},
  volume       = {3},
  year         = {2006},
}

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