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Germanium doping of Si substrates for improved device characteristics and yield

(2010) ECS Transactions. 27(1). p.1041-1046
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Abstract
During the last decade the 300 mm Si wafer has been optimized and one is already studying 450 mm crystals and wafers. The increasing silicon crystal diameter shows two important trends with respect to substrate characteristics: the interstitial oxygen concentration is decreasing while the size of grown in voids (COP's) in vacancy-rich crystals is increasing. The first effect is due the suppression of melt movements by the use of magnetic fields leading to a more limited transport of oxygen to the crystal. This and the decreasing thermal budget of advanced device processing leads to reduced internal gettering capacity. The increasing COP size is due to the combination of decreasing pulling rate and thermal gradient leading to a decreased void nucleation and increased thermal budget for void growth. The effect of Ge doping in the range between 10(16) cm(-3) and 10(19) cm(-3) on both COP's and oxygen precipitation will be discussed.
Keywords
CZOCHRALSKI SILICON, SI1-XGEX EPITAXIAL DEVICES, CZ SILICON, CRYSTALS, GROWTH, DEFECTS, DEGRADATION, DEPENDENCE

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Chicago
Vanhellemont, Jan, Jiahe Chen, Wubing Xu, Deren Yang, Joan Marc Rafi, Hidenori Ohyama, and Eddy Simoen. 2010. “Germanium Doping of Si Substrates for Improved Device Characteristics and Yield.” In ECS Transactions, 27:1041–1046. Pennington, NJ, USA: Electrochemical Society (ECS).
APA
Vanhellemont, J., Chen, J., Xu, W., Yang, D., Rafi, J. M., Ohyama, H., & Simoen, E. (2010). Germanium doping of Si substrates for improved device characteristics and yield. ECS Transactions (Vol. 27, pp. 1041–1046). Presented at the China Semiconductor Technology International Conference 2010 (CSTIC 2010), Pennington, NJ, USA: Electrochemical Society (ECS).
Vancouver
1.
Vanhellemont J, Chen J, Xu W, Yang D, Rafi JM, Ohyama H, et al. Germanium doping of Si substrates for improved device characteristics and yield. ECS Transactions. Pennington, NJ, USA: Electrochemical Society (ECS); 2010. p. 1041–6.
MLA
Vanhellemont, Jan, Jiahe Chen, Wubing Xu, et al. “Germanium Doping of Si Substrates for Improved Device Characteristics and Yield.” ECS Transactions. Vol. 27. Pennington, NJ, USA: Electrochemical Society (ECS), 2010. 1041–1046. Print.
@inproceedings{1959554,
  abstract     = {During the last decade the 300 mm Si wafer has been optimized and one is already studying 450 mm crystals and wafers. The increasing silicon crystal diameter shows two important trends with respect to substrate characteristics: the interstitial oxygen concentration is decreasing while the size of grown in voids (COP's) in vacancy-rich crystals is increasing. 
The first effect is due the suppression of melt movements by the use of magnetic fields leading to a more limited transport of oxygen to the crystal. This and the decreasing thermal budget of advanced device processing leads to reduced internal gettering capacity. The increasing COP size is due to the combination of decreasing pulling rate and thermal gradient leading to a decreased void nucleation and increased thermal budget for void growth. The effect of Ge doping in the range between 10(16) cm(-3) and 10(19) cm(-3) on both COP's and oxygen precipitation will be discussed.},
  author       = {Vanhellemont, Jan and Chen, Jiahe and Xu, Wubing and Yang, Deren and Rafi, Joan Marc and Ohyama, Hidenori and Simoen, Eddy},
  booktitle    = {ECS Transactions},
  isbn         = {9781607681564},
  issn         = {1938-5862},
  keyword      = {CZOCHRALSKI SILICON,SI1-XGEX EPITAXIAL DEVICES,CZ SILICON,CRYSTALS,GROWTH,DEFECTS,DEGRADATION,DEPENDENCE},
  language     = {eng},
  location     = {Shanghai, PR China},
  number       = {1},
  pages        = {1041--1046},
  publisher    = {Electrochemical Society (ECS)},
  title        = {Germanium doping of Si substrates for improved device characteristics and yield},
  url          = {http://dx.doi.org/10.1149/1.3360748},
  volume       = {27},
  year         = {2010},
}

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