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Vacancy formation energy in silicon studied by quenching under hydrogen atmosphere

Masashi Suezawa, N Fukata, Ichiro Suezawa and Jan Vanhellemont UGent (2011) Defects-recognition, Imaging and Physics in Semiconductors, 14th Internationall conference, Abstracts. p.46-46
Please use this url to cite or link to this publication:
author
organization
year
type
conference
publication status
published
subject
in
Defects-recognition, Imaging and Physics in Semiconductors, 14th Internationall conference, Abstracts
pages
46 - 46
conference name
14th International conference on Defects-recognition, Imaging and Physics in Semiconductors (DRIP-XIV)
conference location
Miyazaki, Japan
conference start
2011-09-25
conference end
2011-09-29
language
English
UGent publication?
yes
classification
C3
additional info
uploaded document is poster version
copyright statement
I have retained and own the full copyright for this publication
id
1959490
handle
http://hdl.handle.net/1854/LU-1959490
date created
2011-12-03 10:23:42
date last changed
2016-12-19 15:37:18
@inproceedings{1959490,
  author       = {Suezawa, Masashi and Fukata, N and Suezawa, Ichiro and Vanhellemont, Jan},
  booktitle    = {Defects-recognition, Imaging and Physics in Semiconductors, 14th Internationall conference, Abstracts},
  language     = {eng},
  location     = {Miyazaki, Japan},
  pages        = {46--46},
  title        = {Vacancy formation energy in silicon studied by quenching under hydrogen atmosphere},
  year         = {2011},
}

Chicago
Suezawa, Masashi, N Fukata, Ichiro Suezawa, and Jan Vanhellemont. 2011. “Vacancy Formation Energy in Silicon Studied by Quenching Under Hydrogen Atmosphere.” In Defects-recognition, Imaging and Physics in Semiconductors, 14th Internationall Conference, Abstracts, 46–46.
APA
Suezawa, M., Fukata, N., Suezawa, I., & Vanhellemont, J. (2011). Vacancy formation energy in silicon studied by quenching under hydrogen atmosphere. Defects-recognition, Imaging and Physics in Semiconductors, 14th Internationall conference, Abstracts (pp. 46–46). Presented at the 14th International conference on Defects-recognition, Imaging and Physics in Semiconductors (DRIP-XIV).
Vancouver
1.
Suezawa M, Fukata N, Suezawa I, Vanhellemont J. Vacancy formation energy in silicon studied by quenching under hydrogen atmosphere. Defects-recognition, Imaging and Physics in Semiconductors, 14th Internationall conference, Abstracts. 2011. p. 46–46.
MLA
Suezawa, Masashi, N Fukata, Ichiro Suezawa, et al. “Vacancy Formation Energy in Silicon Studied by Quenching Under Hydrogen Atmosphere.” Defects-recognition, Imaging and Physics in Semiconductors, 14th Internationall Conference, Abstracts. 2011. 46–46. Print.