Advanced search
1 file | 781.38 KB

Vacancy formation energy in silicon studied by quenching under hydrogen atmosphere

Author
Organization

Downloads

  • Poster Suezawa DRIP XIV.pdf
    • full text
    • |
    • open access
    • |
    • PDF
    • |
    • 781.38 KB

Citation

Please use this url to cite or link to this publication:

Chicago
Suezawa, Masashi, N Fukata, Ichiro Suezawa, and Jan Vanhellemont. 2011. “Vacancy Formation Energy in Silicon Studied by Quenching Under Hydrogen Atmosphere.” In Defects-recognition, Imaging and Physics in Semiconductors, 14th Internationall Conference, Abstracts, 46–46.
APA
Suezawa, M., Fukata, N., Suezawa, I., & Vanhellemont, J. (2011). Vacancy formation energy in silicon studied by quenching under hydrogen atmosphere. Defects-recognition, Imaging and Physics in Semiconductors, 14th Internationall conference, Abstracts (pp. 46–46). Presented at the 14th International conference on Defects-recognition, Imaging and Physics in Semiconductors (DRIP-XIV).
Vancouver
1.
Suezawa M, Fukata N, Suezawa I, Vanhellemont J. Vacancy formation energy in silicon studied by quenching under hydrogen atmosphere. Defects-recognition, Imaging and Physics in Semiconductors, 14th Internationall conference, Abstracts. 2011. p. 46–46.
MLA
Suezawa, Masashi, N Fukata, Ichiro Suezawa, et al. “Vacancy Formation Energy in Silicon Studied by Quenching Under Hydrogen Atmosphere.” Defects-recognition, Imaging and Physics in Semiconductors, 14th Internationall Conference, Abstracts. 2011. 46–46. Print.
@inproceedings{1959490,
  author       = {Suezawa, Masashi and Fukata, N and Suezawa, Ichiro and Vanhellemont, Jan},
  booktitle    = {Defects-recognition, Imaging and Physics in Semiconductors, 14th Internationall conference, Abstracts},
  language     = {eng},
  location     = {Miyazaki, Japan},
  pages        = {46--46},
  title        = {Vacancy formation energy in silicon studied by quenching under hydrogen atmosphere},
  year         = {2011},
}