Metal implants-dependent carrier recombination characteristics in Ge
- Author
- E Gaubas, A Uleckas, Jan Vanhellemont (UGent) and W Geens
- Organization
- Keywords
- Deep-level spectroscopy, Photo-conductivity quenching, GERMANIUM, SEMICONDUCTORS, Carrier lifetime
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-1959075
- MLA
- Gaubas, E., et al. “Metal Implants-Dependent Carrier Recombination Characteristics in Ge.” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol. 11, no. 5–6, 2008, pp. 291–94, doi:10.1016/j.mssp.2008.07.009.
- APA
- Gaubas, E., Uleckas, A., Vanhellemont, J., & Geens, W. (2008). Metal implants-dependent carrier recombination characteristics in Ge. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 11(5–6), 291–294. https://doi.org/10.1016/j.mssp.2008.07.009
- Chicago author-date
- Gaubas, E, A Uleckas, Jan Vanhellemont, and W Geens. 2008. “Metal Implants-Dependent Carrier Recombination Characteristics in Ge.” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 11 (5–6): 291–94. https://doi.org/10.1016/j.mssp.2008.07.009.
- Chicago author-date (all authors)
- Gaubas, E, A Uleckas, Jan Vanhellemont, and W Geens. 2008. “Metal Implants-Dependent Carrier Recombination Characteristics in Ge.” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 11 (5–6): 291–294. doi:10.1016/j.mssp.2008.07.009.
- Vancouver
- 1.Gaubas E, Uleckas A, Vanhellemont J, Geens W. Metal implants-dependent carrier recombination characteristics in Ge. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2008;11(5–6):291–4.
- IEEE
- [1]E. Gaubas, A. Uleckas, J. Vanhellemont, and W. Geens, “Metal implants-dependent carrier recombination characteristics in Ge,” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol. 11, no. 5–6, pp. 291–294, 2008.
@article{1959075,
author = {{Gaubas, E and Uleckas, A and Vanhellemont, Jan and Geens, W}},
issn = {{1369-8001}},
journal = {{MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}},
keywords = {{Deep-level spectroscopy,Photo-conductivity quenching,GERMANIUM,SEMICONDUCTORS,Carrier lifetime}},
language = {{eng}},
location = {{Strasbourg, France}},
number = {{5-6}},
pages = {{291--294}},
title = {{Metal implants-dependent carrier recombination characteristics in Ge}},
url = {{http://doi.org/10.1016/j.mssp.2008.07.009}},
volume = {{11}},
year = {{2008}},
}
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