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Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation

JM Rafi, Jan Vanhellemont UGent, E Simoen, J Chen, M Zabala and F Campabadal (2009) PHYSICA B-CONDENSED MATTER. 404(23-24). p.4723-4726
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (proceedingsPaper)
publication status
published
subject
keyword
DETECTORS, DEPENDENCE
journal title
PHYSICA B-CONDENSED MATTER
Physica B
volume
404
issue
23-24
pages
4723 - 4726
conference name
25th International conference on Defects in Semiconductors
conference location
St Petersburg, Russia
conference start
2009-07-20
conference end
2009-07-24
Web of Science type
Article; Proceedings Paper
Web of Science id
000276029300061
JCR category
PHYSICS, CONDENSED MATTER
JCR impact factor
1.056 (2009)
JCR rank
41/65 (2009)
JCR quartile
3 (2009)
ISSN
0921-4526
DOI
10.1016/j.physb.2009.08.150
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1959010
handle
http://hdl.handle.net/1854/LU-1959010
date created
2011-12-03 09:27:14
date last changed
2016-12-19 15:42:20
@article{1959010,
  author       = {Rafi, JM and Vanhellemont, Jan and Simoen, E and Chen, J and Zabala, M and Campabadal, F},
  issn         = {0921-4526},
  journal      = {PHYSICA B-CONDENSED MATTER},
  keyword      = {DETECTORS,DEPENDENCE},
  language     = {eng},
  location     = {St Petersburg, Russia},
  number       = {23-24},
  pages        = {4723--4726},
  title        = {Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation},
  url          = {http://dx.doi.org/10.1016/j.physb.2009.08.150},
  volume       = {404},
  year         = {2009},
}

Chicago
Rafi, JM, Jan Vanhellemont, E Simoen, J Chen, M Zabala, and F Campabadal. 2009. “Impact of Silicon Substrate Germanium Doping on Diode Characteristics and on Thermal Donor Formation.” Physica B-condensed Matter 404 (23-24): 4723–4726.
APA
Rafi, J., Vanhellemont, J., Simoen, E., Chen, J., Zabala, M., & Campabadal, F. (2009). Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation. PHYSICA B-CONDENSED MATTER, 404(23-24), 4723–4726. Presented at the 25th International conference on Defects in Semiconductors.
Vancouver
1.
Rafi J, Vanhellemont J, Simoen E, Chen J, Zabala M, Campabadal F. Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation. PHYSICA B-CONDENSED MATTER. 2009;404(23-24):4723–6.
MLA
Rafi, JM, Jan Vanhellemont, E Simoen, et al. “Impact of Silicon Substrate Germanium Doping on Diode Characteristics and on Thermal Donor Formation.” PHYSICA B-CONDENSED MATTER 404.23-24 (2009): 4723–4726. Print.