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Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation

(2009) PHYSICA B-CONDENSED MATTER. 404(23-24). p.4723-4726
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DETECTORS, DEPENDENCE

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Citation

Please use this url to cite or link to this publication:

Chicago
Rafi, JM, Jan Vanhellemont, E Simoen, J Chen, M Zabala, and F Campabadal. 2009. “Impact of Silicon Substrate Germanium Doping on Diode Characteristics and on Thermal Donor Formation.” Physica B-condensed Matter 404 (23-24): 4723–4726.
APA
Rafi, J., Vanhellemont, J., Simoen, E., Chen, J., Zabala, M., & Campabadal, F. (2009). Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation. PHYSICA B-CONDENSED MATTER, 404(23-24), 4723–4726. Presented at the 25th International conference on Defects in Semiconductors.
Vancouver
1.
Rafi J, Vanhellemont J, Simoen E, Chen J, Zabala M, Campabadal F. Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation. PHYSICA B-CONDENSED MATTER. 2009;404(23-24):4723–6.
MLA
Rafi, JM, Jan Vanhellemont, E Simoen, et al. “Impact of Silicon Substrate Germanium Doping on Diode Characteristics and on Thermal Donor Formation.” PHYSICA B-CONDENSED MATTER 404.23-24 (2009): 4723–4726. Print.
@article{1959010,
  author       = {Rafi, JM and Vanhellemont, Jan and Simoen, E and Chen, J and Zabala, M and Campabadal, F},
  issn         = {0921-4526},
  journal      = {PHYSICA B-CONDENSED MATTER},
  keyword      = {DETECTORS,DEPENDENCE},
  language     = {eng},
  location     = {St Petersburg, Russia},
  number       = {23-24},
  pages        = {4723--4726},
  title        = {Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation},
  url          = {http://dx.doi.org/10.1016/j.physb.2009.08.150},
  volume       = {404},
  year         = {2009},
}

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