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On the assumed impact of germanium doping on void formation in Czochralski-grown silicon

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CRYSTAL-GROWTH, IN DEFECTS, CARBON, SI, INTRINSIC POINT-DEFECTS, IMPURITIES

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Chicago
Vanhellemont, Jan, XinPeng Zhang, WuBing Xu, JiaHe Chen, XiangYang Ma, and DeRen Yang. 2010. “On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-grown Silicon.” Journal of Applied Physics 108 (12).
APA
Vanhellemont, J., Zhang, X., Xu, W., Chen, J., Ma, X., & Yang, D. (2010). On the assumed impact of germanium doping on void formation in Czochralski-grown silicon. JOURNAL OF APPLIED PHYSICS, 108(12).
Vancouver
1.
Vanhellemont J, Zhang X, Xu W, Chen J, Ma X, Yang D. On the assumed impact of germanium doping on void formation in Czochralski-grown silicon. JOURNAL OF APPLIED PHYSICS. 2010;108(12).
MLA
Vanhellemont, Jan, XinPeng Zhang, WuBing Xu, et al. “On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-grown Silicon.” JOURNAL OF APPLIED PHYSICS 108.12 (2010): n. pag. Print.
@article{1958980,
  articleno    = {123501},
  author       = {Vanhellemont, Jan and Zhang, XinPeng and Xu, WuBing and Chen, JiaHe and Ma, XiangYang and Yang, DeRen},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  keyword      = {CRYSTAL-GROWTH,IN DEFECTS,CARBON,SI,INTRINSIC POINT-DEFECTS,IMPURITIES},
  language     = {eng},
  number       = {12},
  pages        = {4},
  title        = {On the assumed impact of germanium doping on void formation in Czochralski-grown silicon},
  url          = {http://dx.doi.org/10.1063/1.3503154},
  volume       = {108},
  year         = {2010},
}

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