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On the assumed impact of germanium doping on void formation in Czochralski-grown silicon

Jan Vanhellemont UGent, XinPeng Zhang, WuBing Xu, JiaHe Chen, XiangYang Ma and DeRen Yang (2010) JOURNAL OF APPLIED PHYSICS. 108(12).
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
CRYSTAL-GROWTH, IN DEFECTS, CARBON, SI, INTRINSIC POINT-DEFECTS, IMPURITIES
journal title
JOURNAL OF APPLIED PHYSICS
J. Appl. Phys.
volume
108
issue
12
article number
123501
pages
4 pages
Web of Science type
Article
Web of Science id
000285768800021
JCR category
PHYSICS, APPLIED
JCR impact factor
2.064 (2010)
JCR rank
33/116 (2010)
JCR quartile
2 (2010)
ISSN
0021-8979
DOI
10.1063/1.3503154
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1958980
handle
http://hdl.handle.net/1854/LU-1958980
date created
2011-12-03 09:27:14
date last changed
2016-12-21 15:41:58
@article{1958980,
  articleno    = {123501},
  author       = {Vanhellemont, Jan and Zhang, XinPeng and Xu, WuBing and Chen, JiaHe and Ma, XiangYang and Yang, DeRen},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  keyword      = {CRYSTAL-GROWTH,IN DEFECTS,CARBON,SI,INTRINSIC POINT-DEFECTS,IMPURITIES},
  language     = {eng},
  number       = {12},
  pages        = {4},
  title        = {On the assumed impact of germanium doping on void formation in Czochralski-grown silicon},
  url          = {http://dx.doi.org/10.1063/1.3503154},
  volume       = {108},
  year         = {2010},
}

Chicago
Vanhellemont, Jan, XinPeng Zhang, WuBing Xu, JiaHe Chen, XiangYang Ma, and DeRen Yang. 2010. “On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-grown Silicon.” Journal of Applied Physics 108 (12).
APA
Vanhellemont, J., Zhang, X., Xu, W., Chen, J., Ma, X., & Yang, D. (2010). On the assumed impact of germanium doping on void formation in Czochralski-grown silicon. JOURNAL OF APPLIED PHYSICS, 108(12).
Vancouver
1.
Vanhellemont J, Zhang X, Xu W, Chen J, Ma X, Yang D. On the assumed impact of germanium doping on void formation in Czochralski-grown silicon. JOURNAL OF APPLIED PHYSICS. 2010;108(12).
MLA
Vanhellemont, Jan, XinPeng Zhang, WuBing Xu, et al. “On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-grown Silicon.” JOURNAL OF APPLIED PHYSICS 108.12 (2010): n. pag. Print.