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Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited

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SWIRL DEFECTS, HEAT-TRANSFER, STACKING-FAULTS, GLOBAL SIMULATION, BORON CONCENTRATION, IN DEFECTS, SI CRYSTALS, CZOCHRALSKI SILICON, SELF-DIFFUSION, AXIAL TEMPERATURE-GRADIENT

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Citation

Please use this url to cite or link to this publication:

Chicago
Vanhellemont, Jan. 2011. “Intrinsic Point Defect Incorporation in Silicon Single Crystals Grown from a Melt, Revisited.” Journal of Applied Physics 110 (6).
APA
Vanhellemont, J. (2011). Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited. JOURNAL OF APPLIED PHYSICS, 110(6).
Vancouver
1.
Vanhellemont J. Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited. JOURNAL OF APPLIED PHYSICS. 2011;110(6).
MLA
Vanhellemont, Jan. “Intrinsic Point Defect Incorporation in Silicon Single Crystals Grown from a Melt, Revisited.” JOURNAL OF APPLIED PHYSICS 110.6 (2011): n. pag. Print.
@article{1958966,
  articleno    = {063519},
  author       = {Vanhellemont, Jan},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  keyword      = {SWIRL DEFECTS,HEAT-TRANSFER,STACKING-FAULTS,GLOBAL SIMULATION,BORON CONCENTRATION,IN DEFECTS,SI CRYSTALS,CZOCHRALSKI SILICON,SELF-DIFFUSION,AXIAL TEMPERATURE-GRADIENT},
  language     = {eng},
  number       = {6},
  pages        = {16},
  title        = {Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited},
  url          = {http://dx.doi.org/10.1063/1.3641635},
  volume       = {110},
  year         = {2011},
}

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