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Center for nano- and biophotonics (NB-Photonics)
Abstract
Heterogeneous integration of III-V semiconductor compounds on SOI is one of the key technologies for next generation on chip optical interconnects. The use of photonic crystals nanolasers, within this context, represents a disruptive solution in terms of footprint, activation energy and ultrafast response. In this work, we study the evanescent wave coupling occurring between the nanolasers and a subjacent Si wire and demonstrate that more than 90% of the light is funneled into the Si circuitry.
Keywords
high-speed optical techniques, gallium arsenide, III-V semiconductors, indium compounds, integrated optics, nanophotonics, photonic crystals, silicon-on-insulator, quantum well lasers

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Citation

Please use this url to cite or link to this publication:

Chicago
Bazin, A, Yacine Halioua, T Karle, P Monnier, Günther Roelkens, I Sagnes, R Raj, and F Raineri. 2011. “Evanescent Wave Coupling in Hybrid III-V/SOI Nanolaser.” In 2011 13th International Conference on Transparent Optical Networks, ed. M Jaworski and M Marciniak. New York, NY, USA: IEEE.
APA
Bazin, A, Halioua, Y., Karle, T., Monnier, P., Roelkens, G., Sagnes, I., Raj, R., et al. (2011). Evanescent wave coupling in hybrid III-V/SOI nanolaser. In M. Jaworski & M. Marciniak (Eds.), 2011 13th International conference on transparent optical networks. Presented at the 13th International conference on Transparent Optical Networks (ICTON 2011), New York, NY, USA: IEEE.
Vancouver
1.
Bazin A, Halioua Y, Karle T, Monnier P, Roelkens G, Sagnes I, et al. Evanescent wave coupling in hybrid III-V/SOI nanolaser. In: Jaworski M, Marciniak M, editors. 2011 13th International conference on transparent optical networks. New York, NY, USA: IEEE; 2011.
MLA
Bazin, A, Yacine Halioua, T Karle, et al. “Evanescent Wave Coupling in Hybrid III-V/SOI Nanolaser.” 2011 13th International Conference on Transparent Optical Networks. Ed. M Jaworski & M Marciniak. New York, NY, USA: IEEE, 2011. Print.
@inproceedings{1958427,
  abstract     = {Heterogeneous integration of III-V semiconductor compounds on SOI is one of the key technologies for next generation on chip optical interconnects. The use of photonic crystals nanolasers, within this context, represents a disruptive solution in terms of footprint, activation energy and ultrafast response. In this work, we study the evanescent wave coupling occurring between the nanolasers and a subjacent Si wire and demonstrate that more than 90\% of the light is funneled into the Si circuitry.},
  articleno    = {We.D2.2},
  author       = {Bazin, A and Halioua, Yacine and Karle, T and Monnier, P and Roelkens, G{\"u}nther and Sagnes, I and Raj, R and Raineri, F},
  booktitle    = {2011 13th International conference on transparent optical networks},
  editor       = {Jaworski, M and Marciniak, M},
  isbn         = {9781457708824},
  keyword      = {high-speed optical techniques,gallium arsenide,III-V semiconductors,indium compounds,integrated optics,nanophotonics,photonic crystals,silicon-on-insulator,quantum well lasers},
  language     = {eng},
  location     = {Stockholm, Sweden},
  pages        = {3},
  publisher    = {IEEE},
  title        = {Evanescent wave coupling in hybrid III-V/SOI nanolaser},
  url          = {http://dx.doi.org/10.1109/ICTON.2011.5971135},
  year         = {2011},
}

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