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DETERMINATION OF TUNNELING PARAMETERS IN ULTRA-THIN OXIDE LAYER POLY-SI/SIO2/SI STRUCTURES.

(1995) SOLID-STATE ELECTRONICS. 38(8). p.1465-1471
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Chicago
DEPAS, M, B VERMEIRE, PW MERTENS, Roland Vanmeirhaeghe, and MM HEYNS. 1995. “DETERMINATION OF TUNNELING PARAMETERS IN ULTRA-THIN OXIDE LAYER POLY-SI/SIO2/SI STRUCTURES.” Solid-state Electronics 38 (8): 1465–1471.
APA
DEPAS, M., VERMEIRE, B., MERTENS, P., Vanmeirhaeghe, R., & HEYNS, M. (1995). DETERMINATION OF TUNNELING PARAMETERS IN ULTRA-THIN OXIDE LAYER POLY-SI/SIO2/SI STRUCTURES. SOLID-STATE ELECTRONICS, 38(8), 1465–1471.
Vancouver
1.
DEPAS M, VERMEIRE B, MERTENS P, Vanmeirhaeghe R, HEYNS M. DETERMINATION OF TUNNELING PARAMETERS IN ULTRA-THIN OXIDE LAYER POLY-SI/SIO2/SI STRUCTURES. SOLID-STATE ELECTRONICS. 1995;38(8):1465–71.
MLA
DEPAS, M, B VERMEIRE, PW MERTENS, et al. “DETERMINATION OF TUNNELING PARAMETERS IN ULTRA-THIN OXIDE LAYER POLY-SI/SIO2/SI STRUCTURES.” SOLID-STATE ELECTRONICS 38.8 (1995): 1465–1471. Print.
@article{194568,
  author       = {DEPAS, M and VERMEIRE, B and MERTENS, PW and Vanmeirhaeghe, Roland and HEYNS, MM},
  issn         = {0038-1101},
  journal      = {SOLID-STATE ELECTRONICS},
  language     = {eng},
  number       = {8},
  pages        = {1465--1471},
  title        = {DETERMINATION OF TUNNELING PARAMETERS IN ULTRA-THIN OXIDE LAYER POLY-SI/SIO2/SI STRUCTURES.},
  volume       = {38},
  year         = {1995},
}