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Analogue modulation characteristics of InP membrane microdisc laser for in-building networks

H-D Jung, Rajesh Kumar UGent, P Regreny, H Dorren, T Koonen and O Raz (2011) ELECTRONICS LETTERS. 47(2). p.121-122
abstract
Using thin membrane InP microdisc lasers heterogeneously integrated on a silicon on insulator (SOI) substrate having a broadband analogue modulation bandwidth of 11 GHz, analogue direct modulation with radio data signals (64 and 256 QAM, 20M symbols/s at 5 GHz RF carrier) is demonstrated. The demonstration shows the potential of the microdisc laser as a low-energy analogue optical transmitter with error-vector magnitude penalties of 3.6 and 4.2% for 64 and 256 QAM, respectively, and the low biasing currents for both DC (4 mW) and RF (0.1 mW) signals, which are compatible with signals and currents which can be supplied by a simple CMOS driving chip.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
RADIO, PERFORMANCE
journal title
ELECTRONICS LETTERS
Electron. Lett.
volume
47
issue
2
pages
121 - 122
Web of Science type
Article
Web of Science id
000286374600034
JCR category
ENGINEERING, ELECTRICAL & ELECTRONIC
JCR impact factor
0.965 (2011)
JCR rank
131/244 (2011)
JCR quartile
3 (2011)
ISSN
0013-5194
DOI
10.1049/el.2010.2456
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1937727
handle
http://hdl.handle.net/1854/LU-1937727
date created
2011-10-28 11:34:36
date last changed
2011-11-04 14:03:14
@article{1937727,
  abstract     = {Using thin membrane InP microdisc lasers heterogeneously integrated on a silicon on insulator (SOI) substrate having a broadband analogue modulation bandwidth of 11 GHz, analogue direct modulation with radio data signals (64 and 256 QAM, 20M symbols/s at 5 GHz RF carrier) is demonstrated. The demonstration shows the potential of the microdisc laser as a low-energy analogue optical transmitter with error-vector magnitude penalties of 3.6 and 4.2\% for 64 and 256 QAM, respectively, and the low biasing currents for both DC (4 mW) and RF (0.1 mW) signals, which are compatible with signals and currents which can be supplied by a simple CMOS driving chip.},
  author       = {Jung, H-D and Kumar, Rajesh and Regreny, P and Dorren, H and Koonen, T and Raz, O},
  issn         = {0013-5194},
  journal      = {ELECTRONICS LETTERS},
  keyword      = {RADIO,PERFORMANCE},
  language     = {eng},
  number       = {2},
  pages        = {121--122},
  title        = {Analogue modulation characteristics of InP membrane microdisc laser for in-building networks},
  url          = {http://dx.doi.org/10.1049/el.2010.2456},
  volume       = {47},
  year         = {2011},
}

Chicago
Jung, H-D, Rajesh Kumar, P Regreny, H Dorren, T Koonen, and O Raz. 2011. “Analogue Modulation Characteristics of InP Membrane Microdisc Laser for In-building Networks.” Electronics Letters 47 (2): 121–122.
APA
Jung, H.-D., Kumar, R., Regreny, P., Dorren, H., Koonen, T., & Raz, O. (2011). Analogue modulation characteristics of InP membrane microdisc laser for in-building networks. ELECTRONICS LETTERS, 47(2), 121–122.
Vancouver
1.
Jung H-D, Kumar R, Regreny P, Dorren H, Koonen T, Raz O. Analogue modulation characteristics of InP membrane microdisc laser for in-building networks. ELECTRONICS LETTERS. 2011;47(2):121–2.
MLA
Jung, H-D, Rajesh Kumar, P Regreny, et al. “Analogue Modulation Characteristics of InP Membrane Microdisc Laser for In-building Networks.” ELECTRONICS LETTERS 47.2 (2011): 121–122. Print.