Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells
- Author
- L Goux, Karl Opsomer (UGent) , R Degraeve, R Muller, Christophe Detavernier (UGent) , DJ Wouters, M Jurczak, L Altimime and JA Kittl
- Organization
- Abstract
- In this letter, we explore the influence of the Cu(x)Te(1-x) layer composition (0.2 < x < 0.8) on the resistive switching of Cu(x)Te(1-x)/Al(2)O(3)/Si cells. While x > 0.7 leads to large reset power, similar to pure-Cu electrodes, x < 0.3 results in volatile forming properties. The intermediate range 0.5< x < 0.7 shows optimum memory properties, featuring improved control of filament programming using <5 mu A as well as state stability at 85 degrees C. The composition-dependent programming control and filament stability are closely associated with the phases in the Cu(x)Te(1-x) layer and are explained as related to the chemical affinity between Cu and Te. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3621835]
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-1934564
- MLA
- Goux, L., et al. “Influence of the Cu-Te Composition and Microstructure on the Resistive Switching of Cu-Te/Al(2)O(3)/Si Cells.” APPLIED PHYSICS LETTERS, vol. 99, no. 5, 2011, doi:10.1063/1.3621835.
- APA
- Goux, L., Opsomer, K., Degraeve, R., Muller, R., Detavernier, C., Wouters, D., … Kittl, J. (2011). Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells. APPLIED PHYSICS LETTERS, 99(5). https://doi.org/10.1063/1.3621835
- Chicago author-date
- Goux, L, Karl Opsomer, R Degraeve, R Muller, Christophe Detavernier, DJ Wouters, M Jurczak, L Altimime, and JA Kittl. 2011. “Influence of the Cu-Te Composition and Microstructure on the Resistive Switching of Cu-Te/Al(2)O(3)/Si Cells.” APPLIED PHYSICS LETTERS 99 (5). https://doi.org/10.1063/1.3621835.
- Chicago author-date (all authors)
- Goux, L, Karl Opsomer, R Degraeve, R Muller, Christophe Detavernier, DJ Wouters, M Jurczak, L Altimime, and JA Kittl. 2011. “Influence of the Cu-Te Composition and Microstructure on the Resistive Switching of Cu-Te/Al(2)O(3)/Si Cells.” APPLIED PHYSICS LETTERS 99 (5). doi:10.1063/1.3621835.
- Vancouver
- 1.Goux L, Opsomer K, Degraeve R, Muller R, Detavernier C, Wouters D, et al. Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells. APPLIED PHYSICS LETTERS. 2011;99(5).
- IEEE
- [1]L. Goux et al., “Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells,” APPLIED PHYSICS LETTERS, vol. 99, no. 5, 2011.
@article{1934564,
abstract = {{In this letter, we explore the influence of the Cu(x)Te(1-x) layer composition (0.2 < x < 0.8) on the resistive switching of Cu(x)Te(1-x)/Al(2)O(3)/Si cells. While x > 0.7 leads to large reset power, similar to pure-Cu electrodes, x < 0.3 results in volatile forming properties. The intermediate range 0.5< x < 0.7 shows optimum memory properties, featuring improved control of filament programming using <5 mu A as well as state stability at 85 degrees C. The composition-dependent programming control and filament stability are closely associated with the phases in the Cu(x)Te(1-x) layer and are explained as related to the chemical affinity between Cu and Te. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3621835]}},
articleno = {{053502}},
author = {{Goux, L and Opsomer, Karl and Degraeve, R and Muller, R and Detavernier, Christophe and Wouters, DJ and Jurczak, M and Altimime, L and Kittl, JA}},
issn = {{0003-6951}},
journal = {{APPLIED PHYSICS LETTERS}},
language = {{eng}},
number = {{5}},
pages = {{3}},
title = {{Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells}},
url = {{http://doi.org/10.1063/1.3621835}},
volume = {{99}},
year = {{2011}},
}
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