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Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

Shaoren Deng UGent, Qi Xie, Davy Deduytsche UGent, Marc Schaekers, Dennis Lin, Matty Caymax, Annelies Delabie, Sven Van den Berghe, Xinping Qu and Christophe Detavernier UGent (2011) APPLIED PHYSICS LETTERS. 99(5).
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
PASSIVATION, DIELECTRICS, GATE, ELECTRICAL-PROPERTIES
journal title
APPLIED PHYSICS LETTERS
Appl. Phys. Lett.
volume
99
issue
5
article_number
052906
pages
3 pages
Web of Science type
Article
Web of Science id
000293617300060
JCR category
PHYSICS, APPLIED
JCR impact factor
3.844 (2011)
JCR rank
17/124 (2011)
JCR quartile
1 (2011)
ISSN
0003-6951
DOI
10.1063/1.3622649
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1934552
handle
http://hdl.handle.net/1854/LU-1934552
date created
2011-10-23 20:59:13
date last changed
2011-10-24 16:02:20
@article{1934552,
  articleno    = {052906},
  author       = {Deng, Shaoren and Xie, Qi and Deduytsche, Davy and Schaekers, Marc and Lin, Dennis and Caymax, Matty and Delabie, Annelies and Van den Berghe, Sven and Qu, Xinping and Detavernier, Christophe},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  keyword      = {PASSIVATION,DIELECTRICS,GATE,ELECTRICAL-PROPERTIES},
  language     = {eng},
  number       = {5},
  pages        = {3},
  title        = {Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices},
  url          = {http://dx.doi.org/10.1063/1.3622649},
  volume       = {99},
  year         = {2011},
}

Chicago
Deng, Shaoren, Qi Xie, Davy Deduytsche, Marc Schaekers, Dennis Lin, Matty Caymax, Annelies Delabie, Sven Van den Berghe, Xinping Qu, and Christophe Detavernier. 2011. “Effective Reduction of Fixed Charge Densities in Germanium Based Metal-oxide-semiconductor Devices.” Applied Physics Letters 99 (5).
APA
Deng, S., Xie, Q., Deduytsche, D., Schaekers, M., Lin, D., Caymax, M., Delabie, A., et al. (2011). Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices. APPLIED PHYSICS LETTERS, 99(5).
Vancouver
1.
Deng S, Xie Q, Deduytsche D, Schaekers M, Lin D, Caymax M, et al. Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices. APPLIED PHYSICS LETTERS. 2011;99(5).
MLA
Deng, Shaoren, Qi Xie, Davy Deduytsche, et al. “Effective Reduction of Fixed Charge Densities in Germanium Based Metal-oxide-semiconductor Devices.” APPLIED PHYSICS LETTERS 99.5 (2011): n. pag. Print.