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Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

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PASSIVATION, DIELECTRICS, GATE, ELECTRICAL-PROPERTIES

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Chicago
Deng, Shaoren, Qi Xie, Davy Deduytsche, Marc Schaekers, Dennis Lin, Matty Caymax, Annelies Delabie, Sven Van den Berghe, Xinping Qu, and Christophe Detavernier. 2011. “Effective Reduction of Fixed Charge Densities in Germanium Based Metal-oxide-semiconductor Devices.” Applied Physics Letters 99 (5).
APA
Deng, S., Xie, Q., Deduytsche, D., Schaekers, M., Lin, D., Caymax, M., Delabie, A., et al. (2011). Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices. APPLIED PHYSICS LETTERS, 99(5).
Vancouver
1.
Deng S, Xie Q, Deduytsche D, Schaekers M, Lin D, Caymax M, et al. Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices. APPLIED PHYSICS LETTERS. 2011;99(5).
MLA
Deng, Shaoren, Qi Xie, Davy Deduytsche, et al. “Effective Reduction of Fixed Charge Densities in Germanium Based Metal-oxide-semiconductor Devices.” APPLIED PHYSICS LETTERS 99.5 (2011): n. pag. Print.
@article{1934552,
  articleno    = {052906},
  author       = {Deng, Shaoren and Xie, Qi and Deduytsche, Davy and Schaekers, Marc and Lin, Dennis and Caymax, Matty and Delabie, Annelies and Van den Berghe, Sven and Qu, Xinping and Detavernier, Christophe},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  keyword      = {PASSIVATION,DIELECTRICS,GATE,ELECTRICAL-PROPERTIES},
  language     = {eng},
  number       = {5},
  pages        = {3},
  title        = {Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices},
  url          = {http://dx.doi.org/10.1063/1.3622649},
  volume       = {99},
  year         = {2011},
}

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