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Large reduction of saturation carrier densities by strain in InGaAs/AlGaAs quantum wells

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Abstract
Compressive strain in InGaAs/Ga(Al)As quantum wells leads to a reduction in the saturation carrier density for the bandedge exciton due to a decrease in the hole density of states. An Indium concentration of 11% gives a reduction by a factor of 9 from GaAs thereby opening a new path towards viable nonlinear optical devices. The relevant issues of carrier lifetimes and strain relief are discussed.

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Chicago
Moloney, M, J Hegarty, L Buydens, and Piet Demeester. 1995. “Large Reduction of Saturation Carrier Densities by Strain in InGaAs/AlGaAs Quantum Wells.” Ed. BS Wherrett. Institute of Physics Conference Series 139: 569–572.
APA
Moloney, M., Hegarty, J., Buydens, L., & Demeester, P. (1995). Large reduction of saturation carrier densities by strain in InGaAs/AlGaAs quantum wells. (B. Wherrett, Ed.)Institute of Physics Conference Series, 139, 569–572. Presented at the 1994 International conference on Optical Computing.
Vancouver
1.
Moloney M, Hegarty J, Buydens L, Demeester P. Large reduction of saturation carrier densities by strain in InGaAs/AlGaAs quantum wells. Wherrett B, editor. Institute of Physics Conference Series. Bristol, UK: IOP; 1995;139:569–72.
MLA
Moloney, M, J Hegarty, L Buydens, et al. “Large Reduction of Saturation Carrier Densities by Strain in InGaAs/AlGaAs Quantum Wells.” Ed. BS Wherrett. Institute of Physics Conference Series 139 (1995): 569–572. Print.
@article{193452,
  abstract     = {Compressive strain in InGaAs/Ga(Al)As quantum wells leads to a reduction in the saturation carrier density for the bandedge exciton due to a decrease in the hole density of states. An Indium concentration of 11\% gives a reduction by a factor of 9 from GaAs thereby opening a new path towards viable nonlinear optical devices. The relevant issues of carrier lifetimes and strain relief are discussed.},
  author       = {Moloney, M and Hegarty, J and Buydens, L and Demeester, Piet},
  editor       = {Wherrett, BS},
  isbn         = {9780750301268},
  issn         = {0951-3248},
  journal      = {Institute of Physics Conference Series},
  language     = {eng},
  location     = {Edinburgh, Scotland, UK},
  pages        = {569--572},
  publisher    = {IOP},
  title        = {Large reduction of saturation carrier densities by strain in InGaAs/AlGaAs quantum wells},
  volume       = {139},
  year         = {1995},
}