Interface formation between CuIn1-xGaxSe2 absorber and In2S3 buffer layer deposited by ultrasonic spray pyrolysis
- Author
- Stephan Buecheler, Fabian Pianezzi, Carolin Fella, Adrian Chirila, Koen Decock (UGent) , Marc Burgelman (UGent) and Ayodhya N Tiwari
- Organization
- Keywords
- In(2)S(3), Spray pyrolysis, CIGS, Buffer layer, Solar cells, Diode quality, Interface, Band alignment, ELECTRONIC-PROPERTIES, FILM SOLAR-CELLS, Cu(InGa)Se2
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-1933010
- MLA
- Buecheler, Stephan, et al. “Interface Formation between CuIn1-XGaxSe2 Absorber and In2S3 Buffer Layer Deposited by Ultrasonic Spray Pyrolysis.” THIN SOLID FILMS, vol. 519, no. 21, 2011, pp. 7560–63, doi:10.1016/j.tsf.2011.01.370.
- APA
- Buecheler, S., Pianezzi, F., Fella, C., Chirila, A., Decock, K., Burgelman, M., & Tiwari, A. N. (2011). Interface formation between CuIn1-xGaxSe2 absorber and In2S3 buffer layer deposited by ultrasonic spray pyrolysis. THIN SOLID FILMS, 519(21), 7560–7563. https://doi.org/10.1016/j.tsf.2011.01.370
- Chicago author-date
- Buecheler, Stephan, Fabian Pianezzi, Carolin Fella, Adrian Chirila, Koen Decock, Marc Burgelman, and Ayodhya N Tiwari. 2011. “Interface Formation between CuIn1-XGaxSe2 Absorber and In2S3 Buffer Layer Deposited by Ultrasonic Spray Pyrolysis.” THIN SOLID FILMS 519 (21): 7560–63. https://doi.org/10.1016/j.tsf.2011.01.370.
- Chicago author-date (all authors)
- Buecheler, Stephan, Fabian Pianezzi, Carolin Fella, Adrian Chirila, Koen Decock, Marc Burgelman, and Ayodhya N Tiwari. 2011. “Interface Formation between CuIn1-XGaxSe2 Absorber and In2S3 Buffer Layer Deposited by Ultrasonic Spray Pyrolysis.” THIN SOLID FILMS 519 (21): 7560–7563. doi:10.1016/j.tsf.2011.01.370.
- Vancouver
- 1.Buecheler S, Pianezzi F, Fella C, Chirila A, Decock K, Burgelman M, et al. Interface formation between CuIn1-xGaxSe2 absorber and In2S3 buffer layer deposited by ultrasonic spray pyrolysis. THIN SOLID FILMS. 2011;519(21):7560–3.
- IEEE
- [1]S. Buecheler et al., “Interface formation between CuIn1-xGaxSe2 absorber and In2S3 buffer layer deposited by ultrasonic spray pyrolysis,” THIN SOLID FILMS, vol. 519, no. 21, pp. 7560–7563, 2011.
@article{1933010,
author = {{Buecheler, Stephan and Pianezzi, Fabian and Fella, Carolin and Chirila, Adrian and Decock, Koen and Burgelman, Marc and Tiwari, Ayodhya N}},
issn = {{0040-6090}},
journal = {{THIN SOLID FILMS}},
keywords = {{In(2)S(3),Spray pyrolysis,CIGS,Buffer layer,Solar cells,Diode quality,Interface,Band alignment,ELECTRONIC-PROPERTIES,FILM SOLAR-CELLS,Cu(InGa)Se2}},
language = {{eng}},
number = {{21}},
pages = {{7560--7563}},
title = {{Interface formation between CuIn1-xGaxSe2 absorber and In2S3 buffer layer deposited by ultrasonic spray pyrolysis}},
url = {{http://doi.org/10.1016/j.tsf.2011.01.370}},
volume = {{519}},
year = {{2011}},
}
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