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DLTS and FTIR study of quenching induced defects in germanium

Siegfried Segers UGent, Johan Lauwaert UGent, Henk Vrielinck UGent, Paul Clauws UGent, Freddy Callens UGent, Eddy Simoen and Jan Vanhellemont UGent (2011) DRIP-XIV Miyazaki : 14th international conference on defects-recognition, imaging and physics in semiconductors. p.47-47
abstract
Due to the high carrier mobility in Ge, it is more and more used as active semiconducting layer in advanced electronic devices on Si substrates [1]. Successful growth, doping and further processing of Ge requires however a good understanding of the intrinsic point defect properties that are unfortunately not well known. The present paper reports on the progress of an effort to determine the formation energy and diffusivity of the vacancy in Ge using thermal quenching techniques [2]. Experimental data on the thermal equilibrium concentration and diffusivity of vacancies in Ge are scarce and most are more than 40 years old. Most of the experimental data were obtained based on thermal quenching experiments assuming that the formed acceptors are due to quenched-in vacancies so that their concentration and formation energy can be determined from measured resistivity changes. The formation energy of the vacancy in its different charge states has recently also been calculated using ab initio calculations which showed that the (double) negatively charged vacancy has the lowest formation energy of about 2 eV in good agreement with the acceptor formation energy determined from the quenching experiments. Based on vacancy mediated dopant diffusion studies, Brotzmann et al [3] also concluded that the double negatively charged vacancy is the most probable charge state of the vacancy. In this contribution, the quenched-in acceptors are studied using deep-level transient spectroscopy. As Cu is known as contaminant which is difficult to avoid when quenching Ge, the electric properties of the quenched-in acceptors are carefully compared with those of substitutional Cu. Although at first glance similarities are striking, remarkable differences are also observed and discussed. [1] J. Vanhellemont and E. Simoen, J. Electrochem. Soc. 154 (2007), p. H572. [2] J. Vanhellemont, J. Lauwaert, A. Witecka, P. Spiewak, I. Romandic and P. Clauws, Physica B 404 (2009), p. 4529. [3] S. Brotzmann and H. Bracht, J. Appl. Phys. 103 (2008), p. 033508.
Please use this url to cite or link to this publication:
author
organization
year
type
conference
publication status
published
subject
keyword
quenching, spectroscopy, DLTS, Germanium
in
DRIP-XIV Miyazaki : 14th international conference on defects-recognition, imaging and physics in semiconductors
article_number
abstract PM-25
pages
47 - 47
conference name
14th International conference on Defects-recognition, Imaging and Physics in Semiconductors (DRIP-XIV)
conference location
Miyazaki, Japan
conference start
2011-09-25
conference end
2011-09-29
project
FWO B/10843/02
language
English
UGent publication?
yes
classification
C3
additional info
poster version is available
copyright statement
I have transferred the copyright for this publication to the publisher
id
1906332
handle
http://hdl.handle.net/1854/LU-1906332
date created
2011-09-22 10:45:07
date last changed
2014-12-18 14:32:43
@inproceedings{1906332,
  abstract     = {Due to the high carrier mobility in Ge, it is more and more used as active semiconducting layer in advanced electronic devices on Si substrates [1]. Successful growth, doping and further processing of Ge requires however a good understanding of the intrinsic point defect properties that are unfortunately not well known. The present paper reports on the progress of an effort to determine the formation energy and diffusivity of the vacancy in Ge using thermal quenching techniques [2].
Experimental data on the thermal equilibrium concentration and diffusivity of vacancies in Ge are scarce and most are more than 40 years old. Most of the experimental data were obtained based on thermal quenching experiments assuming that the formed acceptors are due to quenched-in vacancies so that their concentration and formation energy can be determined from measured resistivity changes. 
The formation energy of the vacancy in its different charge states has recently also been calculated using ab initio calculations which showed that the (double) negatively charged vacancy has the lowest formation energy of about 2 eV in good agreement with the acceptor formation energy determined from the quenching experiments. Based on vacancy mediated dopant diffusion studies, Brotzmann et al [3] also concluded that the double negatively charged vacancy is the most probable charge state of the vacancy.   In this contribution, the quenched-in acceptors are studied using deep-level transient spectroscopy. As Cu is known as contaminant which is difficult to avoid when quenching Ge, the electric properties of the quenched-in acceptors are carefully compared with those of substitutional Cu. Although at first glance similarities are striking, remarkable differences are also observed and discussed.
[1] J. Vanhellemont and E. Simoen, J. Electrochem. Soc. 154 (2007), p. H572.
[2] J. Vanhellemont, J. Lauwaert, A. Witecka, P. Spiewak, I. Romandic and P. Clauws, Physica B 404 (2009), p. 4529.
[3] S. Brotzmann and H. Bracht, J. Appl. Phys. 103 (2008), p. 033508.},
  articleno    = {abstract PM-25},
  author       = {Segers, Siegfried and Lauwaert, Johan and Vrielinck, Henk and Clauws, Paul and Callens, Freddy and Simoen, Eddy and Vanhellemont, Jan},
  booktitle    = {DRIP-XIV Miyazaki : 14th international conference on defects-recognition, imaging and physics in semiconductors},
  keyword      = {quenching,spectroscopy,DLTS,Germanium},
  language     = {eng},
  location     = {Miyazaki, Japan},
  pages        = {abstract PM-25:47--abstract PM-25:47},
  title        = {DLTS and FTIR study of quenching induced defects in germanium},
  year         = {2011},
}

Chicago
Segers, Siegfried, Johan Lauwaert, Henk Vrielinck, Paul Clauws, Freddy Callens, Eddy Simoen, and Jan Vanhellemont. 2011. “DLTS and FTIR Study of Quenching Induced Defects in Germanium.” In DRIP-XIV Miyazaki : 14th International Conference on Defects-recognition, Imaging and Physics in Semiconductors, 47–47.
APA
Segers, Siegfried, Lauwaert, J., Vrielinck, H., Clauws, P., Callens, F., Simoen, E., & Vanhellemont, J. (2011). DLTS and FTIR study of quenching induced defects in germanium. DRIP-XIV Miyazaki : 14th international conference on defects-recognition, imaging and physics in semiconductors (pp. 47–47). Presented at the 14th International conference on Defects-recognition, Imaging and Physics in Semiconductors (DRIP-XIV).
Vancouver
1.
Segers S, Lauwaert J, Vrielinck H, Clauws P, Callens F, Simoen E, et al. DLTS and FTIR study of quenching induced defects in germanium. DRIP-XIV Miyazaki : 14th international conference on defects-recognition, imaging and physics in semiconductors. 2011. p. 47–47.
MLA
Segers, Siegfried, Johan Lauwaert, Henk Vrielinck, et al. “DLTS and FTIR Study of Quenching Induced Defects in Germanium.” DRIP-XIV Miyazaki : 14th International Conference on Defects-recognition, Imaging and Physics in Semiconductors. 2011. 47–47. Print.