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RF and 1/F noise investigations on MESFETS and circuits transplanted by epitaxial lift off.

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Chicago
MORF, T, Catherine Brys, Peter Van Daele, Piet Demeester, H BENEDICKTER, and W BACHTOLD. 1996. “RF and 1/F Noise Investigations on MESFETS and Circuits Transplanted by Epitaxial Lift Off.” Ieee Transactions on Electron Devices 43 (9): 1489–1494.
APA
MORF, T., Brys, C., Van Daele, P., Demeester, P., BENEDICKTER, H., & BACHTOLD, W. (1996). RF and 1/F noise investigations on MESFETS and circuits transplanted by epitaxial lift off. IEEE TRANSACTIONS ON ELECTRON DEVICES, 43(9), 1489–1494.
Vancouver
1.
MORF T, Brys C, Van Daele P, Demeester P, BENEDICKTER H, BACHTOLD W. RF and 1/F noise investigations on MESFETS and circuits transplanted by epitaxial lift off. IEEE TRANSACTIONS ON ELECTRON DEVICES. 1996;43(9):1489–94.
MLA
MORF, T, Catherine Brys, Peter Van Daele, et al. “RF and 1/F Noise Investigations on MESFETS and Circuits Transplanted by Epitaxial Lift Off.” IEEE TRANSACTIONS ON ELECTRON DEVICES 43.9 (1996): 1489–1494. Print.
@article{189889,
  author       = {MORF, T and Brys, Catherine and Van Daele, Peter and Demeester, Piet and BENEDICKTER, H and BACHTOLD, W},
  issn         = {0018-9383},
  journal      = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
  language     = {eng},
  number       = {9},
  pages        = {1489--1494},
  title        = {RF and 1/F noise investigations on MESFETS and circuits transplanted by epitaxial lift off.},
  volume       = {43},
  year         = {1996},
}