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Investigation on the electrochemistry and etching at the (100)GaAs vertical bar HIO3 interface.

Philippe Verpoort, Inge Vermeir and Walter Gomes (1996) JOURNAL OF ELECTROANALYTICAL CHEMISTRY. 411(1-2). p.67-72
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
J. Electroanal. Chem.
volume
411
issue
1-2
pages
67-72 pages
Web of Science type
Article
ISSN
0022-0728
language
English
UGent publication?
yes
classification
A1
id
189739
handle
http://hdl.handle.net/1854/LU-189739
date created
2004-01-14 13:41:00
date last changed
2018-01-29 12:12:31
@article{189739,
  author       = {Verpoort, Philippe and Vermeir, Inge and Gomes, Walter},
  issn         = {0022-0728},
  journal      = {JOURNAL OF ELECTROANALYTICAL CHEMISTRY},
  language     = {eng},
  number       = {1-2},
  pages        = {67--72},
  title        = {Investigation on the electrochemistry and etching at the (100)GaAs vertical bar HIO3 interface.},
  volume       = {411},
  year         = {1996},
}

Chicago
Verpoort, Philippe, Inge Vermeir, and Walter Gomes. 1996. “Investigation on the Electrochemistry and Etching at the (100)GaAs Vertical Bar HIO3 Interface.” Journal of Electroanalytical Chemistry 411 (1-2): 67–72.
APA
Verpoort, P., Vermeir, I., & Gomes, W. (1996). Investigation on the electrochemistry and etching at the (100)GaAs vertical bar HIO3 interface. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 411(1-2), 67–72.
Vancouver
1.
Verpoort P, Vermeir I, Gomes W. Investigation on the electrochemistry and etching at the (100)GaAs vertical bar HIO3 interface. JOURNAL OF ELECTROANALYTICAL CHEMISTRY. 1996;411(1-2):67–72.
MLA
Verpoort, Philippe, Inge Vermeir, and Walter Gomes. “Investigation on the Electrochemistry and Etching at the (100)GaAs Vertical Bar HIO3 Interface.” JOURNAL OF ELECTROANALYTICAL CHEMISTRY 411.1-2 (1996): 67–72. Print.