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Investigation on the electrochemistry and etching at the (100)GaAs vertical bar HIO3 interface

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MLA
Verpoort, Philippe, et al. “Investigation on the Electrochemistry and Etching at the (100)GaAs Vertical Bar HIO3 Interface.” JOURNAL OF ELECTROANALYTICAL CHEMISTRY, vol. 411, no. 1–2, 1996, pp. 67–72.
APA
Verpoort, P., Vermeir, I., & Gomes, W. (1996). Investigation on the electrochemistry and etching at the (100)GaAs vertical bar HIO3 interface. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 411(1–2), 67–72.
Chicago author-date
Verpoort, Philippe, Inge Vermeir, and Walter Gomes. 1996. “Investigation on the Electrochemistry and Etching at the (100)GaAs Vertical Bar HIO3 Interface.” JOURNAL OF ELECTROANALYTICAL CHEMISTRY 411 (1–2): 67–72.
Chicago author-date (all authors)
Verpoort, Philippe, Inge Vermeir, and Walter Gomes. 1996. “Investigation on the Electrochemistry and Etching at the (100)GaAs Vertical Bar HIO3 Interface.” JOURNAL OF ELECTROANALYTICAL CHEMISTRY 411 (1–2): 67–72.
Vancouver
1.
Verpoort P, Vermeir I, Gomes W. Investigation on the electrochemistry and etching at the (100)GaAs vertical bar HIO3 interface. JOURNAL OF ELECTROANALYTICAL CHEMISTRY. 1996;411(1–2):67–72.
IEEE
[1]
P. Verpoort, I. Vermeir, and W. Gomes, “Investigation on the electrochemistry and etching at the (100)GaAs vertical bar HIO3 interface,” JOURNAL OF ELECTROANALYTICAL CHEMISTRY, vol. 411, no. 1–2, pp. 67–72, 1996.
@article{189739,
  author       = {{Verpoort, Philippe and Vermeir, Inge and Gomes, Walter}},
  issn         = {{0022-0728}},
  journal      = {{JOURNAL OF ELECTROANALYTICAL CHEMISTRY}},
  language     = {{eng}},
  number       = {{1-2}},
  pages        = {{67--72}},
  title        = {{Investigation on the electrochemistry and etching at the (100)GaAs vertical bar HIO3 interface}},
  volume       = {{411}},
  year         = {{1996}},
}