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On the behaviour of the divacancy in silicon during anneals between 200 and 350 degrees C.

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MLA
TRAUWAERT, MA, J VANHELLEMONT, HE MAES, et al. “On the Behaviour of the Divacancy in Silicon During Anneals Between 200 and 350 Degrees C.” ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 196- (1995): 1147–1151. Print.
APA
TRAUWAERT, M., VANHELLEMONT, J., MAES, H., VANBAVEL, A., LANGOUCHE, G., STESMANS, A., & Clauws, P. (1995). On the behaviour of the divacancy in silicon during anneals between 200 and 350 degrees C. ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 196-, 1147–1151.
Chicago author-date
TRAUWAERT, MA, J VANHELLEMONT, HE MAES, AM VANBAVEL, G LANGOUCHE, A STESMANS, and Paul Clauws. 1995. “On the Behaviour of the Divacancy in Silicon During Anneals Between 200 and 350 Degrees C.” ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 196-: 1147–1151.
Chicago author-date (all authors)
TRAUWAERT, MA, J VANHELLEMONT, HE MAES, AM VANBAVEL, G LANGOUCHE, A STESMANS, and Paul Clauws. 1995. “On the Behaviour of the Divacancy in Silicon During Anneals Between 200 and 350 Degrees C.” ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 196-: 1147–1151.
Vancouver
1.
TRAUWAERT M, VANHELLEMONT J, MAES H, VANBAVEL A, LANGOUCHE G, STESMANS A, et al. On the behaviour of the divacancy in silicon during anneals between 200 and 350 degrees C. ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4. 1995;196-:1147–51.
IEEE
[1]
M. TRAUWAERT et al., “On the behaviour of the divacancy in silicon during anneals between 200 and 350 degrees C.,” ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, vol. 196-, pp. 1147–1151, 1995.
@article{187301,
  author       = {TRAUWAERT, MA and VANHELLEMONT, J and MAES, HE and VANBAVEL, AM and LANGOUCHE, G and STESMANS, A and Clauws, Paul},
  issn         = {0255-5476},
  journal      = {ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4},
  language     = {eng},
  pages        = {1147--1151},
  title        = {On the behaviour of the divacancy in silicon during anneals between 200 and 350 degrees C.},
  volume       = {196-},
  year         = {1995},
}