Advanced search
Add to list

Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon.

Author
Organization

Citation

Please use this url to cite or link to this publication:

MLA
TRAUWAERT, MA, J VANHELLEMONT, HE MAES, et al. “Influence of Oxygen and Carbon on the Generation and Annihilation of Radiation Defects in Silicon.” MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 36.1-3 (1996): 196–199. Print.
APA
TRAUWAERT, M., VANHELLEMONT, J., MAES, H., VANBAVEL, A., LANGOUCHE, G., STESMANS, A., & Clauws, P. (1996). Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 36(1-3), 196–199.
Chicago author-date
TRAUWAERT, MA, J VANHELLEMONT, HE MAES, AM VANBAVEL, G LANGOUCHE, A STESMANS, and Paul Clauws. 1996. “Influence of Oxygen and Carbon on the Generation and Annihilation of Radiation Defects in Silicon.” Materials Science and Engineering B-solid State Materials for Advanced Technology 36 (1-3): 196–199.
Chicago author-date (all authors)
TRAUWAERT, MA, J VANHELLEMONT, HE MAES, AM VANBAVEL, G LANGOUCHE, A STESMANS, and Paul Clauws. 1996. “Influence of Oxygen and Carbon on the Generation and Annihilation of Radiation Defects in Silicon.” Materials Science and Engineering B-solid State Materials for Advanced Technology 36 (1-3): 196–199.
Vancouver
1.
TRAUWAERT M, VANHELLEMONT J, MAES H, VANBAVEL A, LANGOUCHE G, STESMANS A, et al. Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 1996;36(1-3):196–9.
IEEE
[1]
M. TRAUWAERT et al., “Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon.,” MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 36, no. 1–3, pp. 196–199, 1996.
@article{187161,
  author       = {TRAUWAERT, MA and VANHELLEMONT, J and MAES, HE and VANBAVEL, AM and LANGOUCHE, G and STESMANS, A and Clauws, Paul},
  issn         = {0921-5107},
  journal      = {MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY},
  language     = {eng},
  number       = {1-3},
  pages        = {196--199},
  title        = {Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon.},
  volume       = {36},
  year         = {1996},
}