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An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devices.

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Chicago
Vanmeirhaeghe, Roland, Lieve Goubert, Lucien Fiermans, Willy Laflere, Felix Cardon, Peter De Dobbelaere, and Peter Van Daele. 1995. “An XPS Study of the Effects of Semiconductor Processing Treatments Used to Make InP Optoelectronic Devices.” Microscopy of Semiconducting Materials 146: 641–644.
APA
Vanmeirhaeghe, R., Goubert, L., Fiermans, L., Laflere, W., Cardon, F., De Dobbelaere, P., & Van Daele, P. (1995). An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devices. MICROSCOPY OF SEMICONDUCTING MATERIALS, 146, 641–644.
Vancouver
1.
Vanmeirhaeghe R, Goubert L, Fiermans L, Laflere W, Cardon F, De Dobbelaere P, et al. An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devices. MICROSCOPY OF SEMICONDUCTING MATERIALS. 1995;146:641–4.
MLA
Vanmeirhaeghe, Roland, Lieve Goubert, Lucien Fiermans, et al. “An XPS Study of the Effects of Semiconductor Processing Treatments Used to Make InP Optoelectronic Devices.” MICROSCOPY OF SEMICONDUCTING MATERIALS 146 (1995): 641–644. Print.
@article{187018,
  author       = {Vanmeirhaeghe, Roland and Goubert, Lieve and Fiermans, Lucien and Laflere, Willy and Cardon, Felix and De Dobbelaere, Peter and Van Daele, Peter},
  issn         = {0951-3248},
  journal      = {MICROSCOPY OF SEMICONDUCTING MATERIALS},
  language     = {eng},
  pages        = {641--644},
  title        = {An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devices.},
  volume       = {146},
  year         = {1995},
}