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In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: initial growth of HfO2 on Si and Ge substrates

Kilian Devloo-Casier, Jolien Dendooven UGent, KF Ludwig, G Lekens, J D'Haen and Christophe Detavernier UGent (2011) APPLIED PHYSICS LETTERS. 98(23).
Please use this url to cite or link to this publication:
author
organization
alternative title
In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition : initial growth of HfO(2) on Si and Ge substrates
year
type
journalArticle (original)
publication status
published
subject
journal title
APPLIED PHYSICS LETTERS
Appl. Phys. Lett.
volume
98
issue
23
article number
231905
pages
3 pages
Web of Science type
Article
Web of Science id
000291658900019
JCR category
PHYSICS, APPLIED
JCR impact factor
3.844 (2011)
JCR rank
17/124 (2011)
JCR quartile
1 (2011)
ISSN
0003-6951
DOI
10.1063/1.3598433
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1866556
handle
http://hdl.handle.net/1854/LU-1866556
date created
2011-08-04 10:05:17
date last changed
2016-12-21 15:41:50
@article{1866556,
  articleno    = {231905},
  author       = {Devloo-Casier, Kilian and Dendooven, Jolien and Ludwig, KF and Lekens, G and D'Haen, J and Detavernier, Christophe},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  language     = {eng},
  number       = {23},
  pages        = {3},
  title        = {In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: initial growth of HfO2 on Si and Ge substrates},
  url          = {http://dx.doi.org/10.1063/1.3598433},
  volume       = {98},
  year         = {2011},
}

Chicago
Devloo-Casier, Kilian, Jolien Dendooven, KF Ludwig, G Lekens, J D’Haen, and Christophe Detavernier. 2011. “In Situ Synchrotron Based X-ray Fluorescence and Scattering Measurements During Atomic Layer Deposition: Initial Growth of HfO2 on Si and Ge Substrates.” Applied Physics Letters 98 (23).
APA
Devloo-Casier, K., Dendooven, J., Ludwig, K., Lekens, G., D’Haen, J., & Detavernier, C. (2011). In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: initial growth of HfO2 on Si and Ge substrates. APPLIED PHYSICS LETTERS, 98(23).
Vancouver
1.
Devloo-Casier K, Dendooven J, Ludwig K, Lekens G, D’Haen J, Detavernier C. In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: initial growth of HfO2 on Si and Ge substrates. APPLIED PHYSICS LETTERS. 2011;98(23).
MLA
Devloo-Casier, Kilian, Jolien Dendooven, KF Ludwig, et al. “In Situ Synchrotron Based X-ray Fluorescence and Scattering Measurements During Atomic Layer Deposition: Initial Growth of HfO2 on Si and Ge Substrates.” APPLIED PHYSICS LETTERS 98.23 (2011): n. pag. Print.