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In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: initial growth of HfO2 on Si and Ge substrates

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Chicago
Devloo-Casier, Kilian, Jolien Dendooven, KF Ludwig, G Lekens, J D’Haen, and Christophe Detavernier. 2011. “In Situ Synchrotron Based X-ray Fluorescence and Scattering Measurements During Atomic Layer Deposition: Initial Growth of HfO2 on Si and Ge Substrates.” Applied Physics Letters 98 (23).
APA
Devloo-Casier, K., Dendooven, J., Ludwig, K., Lekens, G., D’Haen, J., & Detavernier, C. (2011). In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: initial growth of HfO2 on Si and Ge substrates. APPLIED PHYSICS LETTERS, 98(23).
Vancouver
1.
Devloo-Casier K, Dendooven J, Ludwig K, Lekens G, D’Haen J, Detavernier C. In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: initial growth of HfO2 on Si and Ge substrates. APPLIED PHYSICS LETTERS. 2011;98(23).
MLA
Devloo-Casier, Kilian, Jolien Dendooven, KF Ludwig, et al. “In Situ Synchrotron Based X-ray Fluorescence and Scattering Measurements During Atomic Layer Deposition: Initial Growth of HfO2 on Si and Ge Substrates.” APPLIED PHYSICS LETTERS 98.23 (2011): n. pag. Print.
@article{1866556,
  articleno    = {231905},
  author       = {Devloo-Casier, Kilian and Dendooven, Jolien and Ludwig, KF and Lekens, G and D'Haen, J and Detavernier, Christophe},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  language     = {eng},
  number       = {23},
  pages        = {3},
  title        = {In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: initial growth of HfO2 on Si and Ge substrates},
  url          = {http://dx.doi.org/10.1063/1.3598433},
  volume       = {98},
  year         = {2011},
}

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