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A study of electrically active defects created in p-InP by CH4:H-2 reactive ion etching.

(1997) JOURNAL OF APPLIED PHYSICS. 82(4). p.1696-1699
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Chicago
Goubert, Lieve, Roland Vanmeirhaeghe, Paul Clauws, Felix Cardon, and Peter Van Daele. 1997. “A Study of Electrically Active Defects Created in p-InP by CH4:H-2 Reactive Ion Etching.” Journal of Applied Physics 82 (4): 1696–1699.
APA
Goubert, Lieve, Vanmeirhaeghe, R., Clauws, P., Cardon, F., & Van Daele, P. (1997). A study of electrically active defects created in p-InP by CH4:H-2 reactive ion etching. JOURNAL OF APPLIED PHYSICS, 82(4), 1696–1699.
Vancouver
1.
Goubert L, Vanmeirhaeghe R, Clauws P, Cardon F, Van Daele P. A study of electrically active defects created in p-InP by CH4:H-2 reactive ion etching. JOURNAL OF APPLIED PHYSICS. 1997;82(4):1696–9.
MLA
Goubert, Lieve, Roland Vanmeirhaeghe, Paul Clauws, et al. “A Study of Electrically Active Defects Created in p-InP by CH4:H-2 Reactive Ion Etching.” JOURNAL OF APPLIED PHYSICS 82.4 (1997): 1696–1699. Print.
@article{184646,
  author       = {Goubert, Lieve and Vanmeirhaeghe, Roland and Clauws, Paul and Cardon, Felix and Van Daele, Peter},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  language     = {eng},
  number       = {4},
  pages        = {1696--1699},
  title        = {A study of electrically active defects created in p-InP by CH4:H-2 reactive ion etching.},
  volume       = {82},
  year         = {1997},
}