MOVPE growth optimization of high quality InGaN films.
- Author
- W VANDERSTRICHT, Ingrid Moerman (UGent) , Piet Demeester (UGent) , L CONSIDINE, EJ THRUSH and JA CRAWLEY
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-184634
- MLA
- VANDERSTRICHT, W, Ingrid Moerman, Piet Demeester, et al. “MOVPE Growth Optimization of High Quality InGaN Films.” MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 2.16) 1-6 (1997): n. pag. Print.
- APA
- VANDERSTRICHT, W., Moerman, I., Demeester, P., CONSIDINE, L., THRUSH, E., & CRAWLEY, J. (1997). MOVPE growth optimization of high quality InGaN films. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2(16) 1-6).
- Chicago author-date
- VANDERSTRICHT, W, Ingrid Moerman, Piet Demeester, L CONSIDINE, EJ THRUSH, and JA CRAWLEY. 1997. “MOVPE Growth Optimization of High Quality InGaN Films.” Mrs Internet Journal of Nitride Semiconductor Research 2 (16) 1-6).
- Chicago author-date (all authors)
- VANDERSTRICHT, W, Ingrid Moerman, Piet Demeester, L CONSIDINE, EJ THRUSH, and JA CRAWLEY. 1997. “MOVPE Growth Optimization of High Quality InGaN Films.” Mrs Internet Journal of Nitride Semiconductor Research 2 (16) 1-6).
- Vancouver
- 1.VANDERSTRICHT W, Moerman I, Demeester P, CONSIDINE L, THRUSH E, CRAWLEY J. MOVPE growth optimization of high quality InGaN films. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH. 1997;2(16) 1-6).
- IEEE
- [1]W. VANDERSTRICHT, I. Moerman, P. Demeester, L. CONSIDINE, E. THRUSH, and J. CRAWLEY, “MOVPE growth optimization of high quality InGaN films.,” MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, vol. 2, no. 16) 1–6, 1997.
@article{184634,
author = {VANDERSTRICHT, W and Moerman, Ingrid and Demeester, Piet and CONSIDINE, L and THRUSH, EJ and CRAWLEY, JA},
issn = {1092-5783},
journal = {MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH},
language = {eng},
number = {16) 1-6},
title = {MOVPE growth optimization of high quality InGaN films.},
volume = {2},
year = {1997},
}