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MOVPE growth optimization of high quality InGaN films.

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MLA
VANDERSTRICHT, W, Ingrid Moerman, Piet Demeester, et al. “MOVPE Growth Optimization of High Quality InGaN Films.” MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 2.16) 1-6 (1997): n. pag. Print.
APA
VANDERSTRICHT, W., Moerman, I., Demeester, P., CONSIDINE, L., THRUSH, E., & CRAWLEY, J. (1997). MOVPE growth optimization of high quality InGaN films. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2(16) 1-6).
Chicago author-date
VANDERSTRICHT, W, Ingrid Moerman, Piet Demeester, L CONSIDINE, EJ THRUSH, and JA CRAWLEY. 1997. “MOVPE Growth Optimization of High Quality InGaN Films.” Mrs Internet Journal of Nitride Semiconductor Research 2 (16) 1-6).
Chicago author-date (all authors)
VANDERSTRICHT, W, Ingrid Moerman, Piet Demeester, L CONSIDINE, EJ THRUSH, and JA CRAWLEY. 1997. “MOVPE Growth Optimization of High Quality InGaN Films.” Mrs Internet Journal of Nitride Semiconductor Research 2 (16) 1-6).
Vancouver
1.
VANDERSTRICHT W, Moerman I, Demeester P, CONSIDINE L, THRUSH E, CRAWLEY J. MOVPE growth optimization of high quality InGaN films. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH. 1997;2(16) 1-6).
IEEE
[1]
W. VANDERSTRICHT, I. Moerman, P. Demeester, L. CONSIDINE, E. THRUSH, and J. CRAWLEY, “MOVPE growth optimization of high quality InGaN films.,” MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, vol. 2, no. 16) 1–6, 1997.
@article{184634,
  author       = {VANDERSTRICHT, W and Moerman, Ingrid and Demeester, Piet and CONSIDINE, L and THRUSH, EJ and CRAWLEY, JA},
  issn         = {1092-5783},
  journal      = {MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH},
  language     = {eng},
  number       = {16) 1-6},
  title        = {MOVPE growth optimization of high quality InGaN films.},
  volume       = {2},
  year         = {1997},
}