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Study of GaN films grown by metalorganic chemical vapour deposition

Author
Organization
Abstract
In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. The effects of several growth parameters on the film quality are discussed. The results on n-type doping of GaN with SiH4 are presented. The GaN layers were evaluated by surface morphology studies, DC X-ray diffraction, electrical and optical characterisation.

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Chicago
Van der Stricht, Wim, Ingrid Moerman, Piet Demeester, JA Crawley, and EJ Thrush. 1996. “Study of GaN Films Grown by Metalorganic Chemical Vapour Deposition.” Mrs Internet Journal of Nitride Semiconductor Research 1 (1-46).
APA
Van der Stricht, W., Moerman, I., Demeester, P., Crawley, J., & Thrush, E. (1996). Study of GaN films grown by metalorganic chemical vapour deposition. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1(1-46). Presented at the 1st European GaN workshop (EGW-1).
Vancouver
1.
Van der Stricht W, Moerman I, Demeester P, Crawley J, Thrush E. Study of GaN films grown by metalorganic chemical vapour deposition. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH. 1996;1(1-46).
MLA
Van der Stricht, Wim, Ingrid Moerman, Piet Demeester, et al. “Study of GaN Films Grown by Metalorganic Chemical Vapour Deposition.” MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 1.1-46 (1996): n. pag. Print.
@article{183237,
  abstract     = {In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. The effects of several growth parameters on the film quality are discussed. The results on n-type doping of GaN with SiH4 are presented. The GaN layers were evaluated by surface morphology studies, DC X-ray diffraction, electrical and optical characterisation.},
  articleno    = {3},
  author       = {Van der Stricht, Wim and Moerman, Ingrid and Demeester, Piet and Crawley, JA and Thrush, EJ},
  issn         = {1092-5783},
  journal      = {MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH},
  language     = {eng},
  location     = {Rigi-Kaltbad, Switzerland},
  number       = {1-46},
  pages        = {6},
  title        = {Study of GaN films grown by metalorganic chemical vapour deposition},
  volume       = {1},
  year         = {1996},
}