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A fundamental study on n- and p-In0.53Ga0.47As in H2O2 solution - Electrochemical behavior and selective etching vs. InP.

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Chicago
Theuwis, Antoon, and Walter Gomes. 1997. “A Fundamental Study on N- and p-In0.53Ga0.47As in H2O2 Solution - Electrochemical Behavior and Selective Etching Vs. InP.” Journal of the Electrochemical Society 144 (4): 1390–1398.
APA
Theuwis, A., & Gomes, W. (1997). A fundamental study on n- and p-In0.53Ga0.47As in H2O2 solution - Electrochemical behavior and selective etching vs. InP. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(4), 1390–1398.
Vancouver
1.
Theuwis A, Gomes W. A fundamental study on n- and p-In0.53Ga0.47As in H2O2 solution - Electrochemical behavior and selective etching vs. InP. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1997;144(4):1390–8.
MLA
Theuwis, Antoon, and Walter Gomes. “A Fundamental Study on N- and p-In0.53Ga0.47As in H2O2 Solution - Electrochemical Behavior and Selective Etching Vs. InP.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 144.4 (1997): 1390–1398. Print.
@article{183133,
  author       = {Theuwis, Antoon and Gomes, Walter},
  issn         = {0013-4651},
  journal      = {JOURNAL OF THE ELECTROCHEMICAL SOCIETY},
  language     = {eng},
  number       = {4},
  pages        = {1390--1398},
  title        = {A fundamental study on n- and p-In0.53Ga0.47As in H2O2 solution - Electrochemical behavior and selective etching vs. InP.},
  volume       = {144},
  year         = {1997},
}