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A fundamental study on n- and p-In0.53Ga0.47As in H2O2 solution : electrochemical behavior and selective etching vs. InP

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MLA
Theuwis, Antoon, and Walter Gomes. “A Fundamental Study on N- and p-In0.53Ga0.47As in H2O2 Solution : Electrochemical Behavior and Selective Etching vs. InP.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 144, no. 4, 1997, pp. 1390–98.
APA
Theuwis, A., & Gomes, W. (1997). A fundamental study on n- and p-In0.53Ga0.47As in H2O2 solution : electrochemical behavior and selective etching vs. InP. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(4), 1390–1398.
Chicago author-date
Theuwis, Antoon, and Walter Gomes. 1997. “A Fundamental Study on N- and p-In0.53Ga0.47As in H2O2 Solution : Electrochemical Behavior and Selective Etching vs. InP.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 144 (4): 1390–98.
Chicago author-date (all authors)
Theuwis, Antoon, and Walter Gomes. 1997. “A Fundamental Study on N- and p-In0.53Ga0.47As in H2O2 Solution : Electrochemical Behavior and Selective Etching vs. InP.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 144 (4): 1390–1398.
Vancouver
1.
Theuwis A, Gomes W. A fundamental study on n- and p-In0.53Ga0.47As in H2O2 solution : electrochemical behavior and selective etching vs. InP. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1997;144(4):1390–8.
IEEE
[1]
A. Theuwis and W. Gomes, “A fundamental study on n- and p-In0.53Ga0.47As in H2O2 solution : electrochemical behavior and selective etching vs. InP,” JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 144, no. 4, pp. 1390–1398, 1997.
@article{183133,
  author       = {{Theuwis, Antoon and Gomes, Walter}},
  issn         = {{0013-4651}},
  journal      = {{JOURNAL OF THE ELECTROCHEMICAL SOCIETY}},
  language     = {{eng}},
  number       = {{4}},
  pages        = {{1390--1398}},
  title        = {{A fundamental study on n- and p-In0.53Ga0.47As in H2O2 solution : electrochemical behavior and selective etching vs. InP}},
  volume       = {{144}},
  year         = {{1997}},
}

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