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Yttria-stabilized zirconia thin films grown by r.f. magnetron sputtering from an oxide target

Henryk Tomaszewski, Johan Haemers (UGent) , Nico De Roo (UGent) , Jurgen Denul (UGent) and Roger De Gryse (UGent)
(1997) THIN SOLID FILMS. 293(1-2). p.67-74
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Abstract
Yttria-stabilized zirconia thin films with cubic crystallographic structure were deposited onto glass substrates by r.f. magnetron sputtering from an oxide target. It was found that zirconia growth is strongly dependent on the sputtering power and pressure. At low power and high pressure, zirconia grows preferentially in the (200) direction with columnar microstructure. In contrast, high power and low sputtering pressures promote the growth of randomly oriented polycrystalline zirconia. Increasing the argon flow at constant power and sputtering pressure again favours preferential growth of zirconia layers, however, not in the (200) direction as before, but in the (111) direction.
Keywords
LASER DEPOSITION, ION-BOMBARDMENT, ENERGETIC OXYGEN-ATOMS, sputtering, growth mechanism, oxides, ZNO, BATIO3, BEAM

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Citation

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Chicago
Tomaszewski, Henryk, Johan Haemers, Nico De Roo, Jurgen Denul, and Roger De Gryse. 1997. “Yttria-stabilized Zirconia Thin Films Grown by R.f. Magnetron Sputtering from an Oxide Target.” Thin Solid Films 293 (1-2): 67–74.
APA
Tomaszewski, Henryk, Haemers, J., De Roo, N., Denul, J., & De Gryse, R. (1997). Yttria-stabilized zirconia thin films grown by r.f. magnetron sputtering from an oxide target. THIN SOLID FILMS, 293(1-2), 67–74.
Vancouver
1.
Tomaszewski H, Haemers J, De Roo N, Denul J, De Gryse R. Yttria-stabilized zirconia thin films grown by r.f. magnetron sputtering from an oxide target. THIN SOLID FILMS. 1997;293(1-2):67–74.
MLA
Tomaszewski, Henryk, Johan Haemers, Nico De Roo, et al. “Yttria-stabilized Zirconia Thin Films Grown by R.f. Magnetron Sputtering from an Oxide Target.” THIN SOLID FILMS 293.1-2 (1997): 67–74. Print.
@article{182931,
  abstract     = {Yttria-stabilized zirconia thin films with cubic crystallographic structure were deposited onto glass substrates by r.f. magnetron sputtering from an oxide target. It was found that zirconia growth is strongly dependent on the sputtering power and pressure. At low power and high pressure, zirconia grows preferentially in the (200) direction with columnar microstructure. In contrast, high power and low sputtering pressures promote the growth of randomly oriented polycrystalline zirconia. Increasing the argon flow at constant power and sputtering pressure again favours preferential growth of zirconia layers, however, not in the (200) direction as before, but in the (111) direction.},
  author       = {Tomaszewski, Henryk and Haemers, Johan and De Roo, Nico and Denul, Jurgen and De Gryse, Roger},
  issn         = {0040-6090},
  journal      = {THIN SOLID FILMS},
  keyword      = {LASER DEPOSITION,ION-BOMBARDMENT,ENERGETIC OXYGEN-ATOMS,sputtering,growth mechanism,oxides,ZNO,BATIO3,BEAM},
  language     = {eng},
  number       = {1-2},
  pages        = {67--74},
  title        = {Yttria-stabilized zirconia thin films grown by r.f. magnetron sputtering from an oxide target},
  url          = {http://dx.doi.org/10.1016/S0040-6090(96)09089-X},
  volume       = {293},
  year         = {1997},
}

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