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Optical linewidths of InGaN light emitting diodes and epilayers.

(1997) APPLIED PHYSICS LETTERS. 70(14). p.1843-1845
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Chicago
ODONNELL, KP, T BREITKOPF, H KALT, W VANDERSTRICHT, Ingrid Moerman, Piet Demeester, and PG MIDDLETON. 1997. “Optical Linewidths of InGaN Light Emitting Diodes and Epilayers.” Applied Physics Letters 70 (14): 1843–1845.
APA
ODONNELL, K., BREITKOPF, T., KALT, H., VANDERSTRICHT, W., Moerman, I., Demeester, P., & MIDDLETON, P. (1997). Optical linewidths of InGaN light emitting diodes and epilayers. APPLIED PHYSICS LETTERS, 70(14), 1843–1845.
Vancouver
1.
ODONNELL K, BREITKOPF T, KALT H, VANDERSTRICHT W, Moerman I, Demeester P, et al. Optical linewidths of InGaN light emitting diodes and epilayers. APPLIED PHYSICS LETTERS. 1997;70(14):1843–5.
MLA
ODONNELL, KP, T BREITKOPF, H KALT, et al. “Optical Linewidths of InGaN Light Emitting Diodes and Epilayers.” APPLIED PHYSICS LETTERS 70.14 (1997): 1843–1845. Print.
@article{182772,
  author       = {ODONNELL, KP and BREITKOPF, T and KALT, H and VANDERSTRICHT, W and Moerman, Ingrid and Demeester, Piet and MIDDLETON, PG},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  language     = {eng},
  number       = {14},
  pages        = {1843--1845},
  title        = {Optical linewidths of InGaN light emitting diodes and epilayers.},
  volume       = {70},
  year         = {1997},
}