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Optical linewidths of InGaN light emitting diodes and epilayers.

KP ODONNELL, T BREITKOPF, H KALT, W VANDERSTRICHT, Ingrid Moerman UGent, Piet Demeester UGent and PG MIDDLETON (1997) APPLIED PHYSICS LETTERS. 70(14). p.1843-1845
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
APPLIED PHYSICS LETTERS
Appl. Phys. Lett.
volume
70
issue
14
pages
1843-1845 pages
Web of Science type
Article
ISSN
0003-6951
language
English
UGent publication?
yes
classification
A1
id
182772
handle
http://hdl.handle.net/1854/LU-182772
date created
2004-01-14 13:41:00
date last changed
2016-12-19 15:38:23
@article{182772,
  author       = {ODONNELL, KP and BREITKOPF, T and KALT, H and VANDERSTRICHT, W and Moerman, Ingrid and Demeester, Piet and MIDDLETON, PG},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  language     = {eng},
  number       = {14},
  pages        = {1843--1845},
  title        = {Optical linewidths of InGaN light emitting diodes and epilayers.},
  volume       = {70},
  year         = {1997},
}

Chicago
ODONNELL, KP, T BREITKOPF, H KALT, W VANDERSTRICHT, Ingrid Moerman, Piet Demeester, and PG MIDDLETON. 1997. “Optical Linewidths of InGaN Light Emitting Diodes and Epilayers.” Applied Physics Letters 70 (14): 1843–1845.
APA
ODONNELL, K., BREITKOPF, T., KALT, H., VANDERSTRICHT, W., Moerman, I., Demeester, P., & MIDDLETON, P. (1997). Optical linewidths of InGaN light emitting diodes and epilayers. APPLIED PHYSICS LETTERS, 70(14), 1843–1845.
Vancouver
1.
ODONNELL K, BREITKOPF T, KALT H, VANDERSTRICHT W, Moerman I, Demeester P, et al. Optical linewidths of InGaN light emitting diodes and epilayers. APPLIED PHYSICS LETTERS. 1997;70(14):1843–5.
MLA
ODONNELL, KP, T BREITKOPF, H KALT, et al. “Optical Linewidths of InGaN Light Emitting Diodes and Epilayers.” APPLIED PHYSICS LETTERS 70.14 (1997): 1843–1845. Print.