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Growth and characterization of InAlGaAs(P)/InGaAs(P) MQW structures.

(1997) JOURNAL OF CRYSTAL GROWTH. 170(1-4). p.738-742
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Chicago
VANDERBAUWHEDE, W, X ZHANG, Ingrid Moerman, and Piet Demeester. 1997. “Growth and Characterization of InAlGaAs(P)/InGaAs(P) MQW Structures.” Journal of Crystal Growth 170 (1-4): 738–742.
APA
VANDERBAUWHEDE, W., ZHANG, X., Moerman, I., & Demeester, P. (1997). Growth and characterization of InAlGaAs(P)/InGaAs(P) MQW structures. JOURNAL OF CRYSTAL GROWTH, 170(1-4), 738–742.
Vancouver
1.
VANDERBAUWHEDE W, ZHANG X, Moerman I, Demeester P. Growth and characterization of InAlGaAs(P)/InGaAs(P) MQW structures. JOURNAL OF CRYSTAL GROWTH. 1997;170(1-4):738–42.
MLA
VANDERBAUWHEDE, W, X ZHANG, Ingrid Moerman, et al. “Growth and Characterization of InAlGaAs(P)/InGaAs(P) MQW Structures.” JOURNAL OF CRYSTAL GROWTH 170.1-4 (1997): 738–742. Print.
@article{181653,
  author       = {VANDERBAUWHEDE, W and ZHANG, X and Moerman, Ingrid and Demeester, Piet},
  issn         = {0022-0248},
  journal      = {JOURNAL OF CRYSTAL GROWTH},
  language     = {eng},
  number       = {1-4},
  pages        = {738--742},
  title        = {Growth and characterization of InAlGaAs(P)/InGaAs(P) MQW structures.},
  volume       = {170},
  year         = {1997},
}