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Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth.

(1997) JOURNAL OF CRYSTAL GROWTH. 170(1-4). p.616-620
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Chicago
D’Hondt, Mark, Ingrid Moerman, and Piet Demeester. 1997. “Characterisation of 2% Mismatched InGaAs and InAsP Layers, Grown on Different Buffer Layers and at Different Growth.” Journal of Crystal Growth 170 (1-4): 616–620.
APA
D’Hondt, Mark, Moerman, I., & Demeester, P. (1997). Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth. JOURNAL OF CRYSTAL GROWTH, 170(1-4), 616–620.
Vancouver
1.
D’Hondt M, Moerman I, Demeester P. Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth. JOURNAL OF CRYSTAL GROWTH. 1997;170(1-4):616–20.
MLA
D’Hondt, Mark, Ingrid Moerman, and Piet Demeester. “Characterisation of 2% Mismatched InGaAs and InAsP Layers, Grown on Different Buffer Layers and at Different Growth.” JOURNAL OF CRYSTAL GROWTH 170.1-4 (1997): 616–620. Print.
@article{181651,
  author       = {D'Hondt, Mark and Moerman, Ingrid and Demeester, Piet},
  issn         = {0022-0248},
  journal      = {JOURNAL OF CRYSTAL GROWTH},
  language     = {eng},
  number       = {1-4},
  pages        = {616--620},
  title        = {Characterisation of 2\% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth.},
  volume       = {170},
  year         = {1997},
}