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Study of GaN and InGaN films grown by metalorganic chemical vapour deposition

(1997) JOURNAL OF CRYSTAL GROWTH. 170(1-4). p.344-348
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Abstract
In this paper GaN and InGaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. The effects of several growth parameters on the film quality are discussed. The GaN and InGaN layers were evaluated by surface morphology studies, DC X-ray diffraction, electrical and optical characterisation.
Keywords
STIMULATED-EMISSION, ROOM-TEMPERATURE, DIODES

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Chicago
Van Der Stricht, Wim, Ingrid Moerman, Piet Demeester, JA Crawley, and EJ Thrush. 1997. “Study of GaN and InGaN Films Grown by Metalorganic Chemical Vapour Deposition.” Journal of Crystal Growth 170 (1-4): 344–348.
APA
Van Der Stricht, W., Moerman, I., Demeester, P., Crawley, J., & Thrush, E. (1997). Study of GaN and InGaN films grown by metalorganic chemical vapour deposition. JOURNAL OF CRYSTAL GROWTH, 170(1-4), 344–348. Presented at the 8th International conference on Metalorganic Vapour Phase Epitaxy.
Vancouver
1.
Van Der Stricht W, Moerman I, Demeester P, Crawley J, Thrush E. Study of GaN and InGaN films grown by metalorganic chemical vapour deposition. JOURNAL OF CRYSTAL GROWTH. 1997;170(1-4):344–8.
MLA
Van Der Stricht, Wim, Ingrid Moerman, Piet Demeester, et al. “Study of GaN and InGaN Films Grown by Metalorganic Chemical Vapour Deposition.” JOURNAL OF CRYSTAL GROWTH 170.1-4 (1997): 344–348. Print.
@article{181647,
  abstract     = {In this paper GaN and InGaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. The effects of several growth parameters on the film quality are discussed. The GaN and InGaN layers were evaluated by surface morphology studies, DC X-ray diffraction, electrical and optical characterisation.},
  author       = {Van Der Stricht, Wim and Moerman, Ingrid and Demeester, Piet and Crawley, JA and Thrush, EJ},
  issn         = {0022-0248},
  journal      = {JOURNAL OF CRYSTAL GROWTH},
  keyword      = {STIMULATED-EMISSION,ROOM-TEMPERATURE,DIODES},
  language     = {eng},
  location     = {Cardiff, Wales, UK},
  number       = {1-4},
  pages        = {344--348},
  title        = {Study of GaN and InGaN films grown by metalorganic chemical vapour deposition},
  url          = {http://dx.doi.org/10.1016/S0022-0248(96)00595-7},
  volume       = {170},
  year         = {1997},
}

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