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Study of GaN and InGaN films grown by metalorganic chemical vapour deposition

Wim Van der Stricht, Ingrid Moerman UGent, Piet Demeester UGent, JA Crawley and EJ Thrush (1997) JOURNAL OF CRYSTAL GROWTH. 170(1-4). p.344-348
abstract
In this paper GaN and InGaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. The effects of several growth parameters on the film quality are discussed. The GaN and InGaN layers were evaluated by surface morphology studies, DC X-ray diffraction, electrical and optical characterisation.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (proceedingsPaper)
publication status
published
subject
keyword
STIMULATED-EMISSION, ROOM-TEMPERATURE, DIODES
journal title
JOURNAL OF CRYSTAL GROWTH
J. Cryst. Growth
volume
170
issue
1-4
pages
344 - 348
conference name
8th International conference on Metalorganic Vapour Phase Epitaxy
conference location
Cardiff, Wales, UK
conference start
1996-06-09
conference end
1996-06-13
Web of Science type
Article
ISSN
0022-0248
DOI
10.1016/S0022-0248(96)00595-7
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
181647
handle
http://hdl.handle.net/1854/LU-181647
date created
2004-01-14 13:41:00
date last changed
2016-12-19 15:38:23
@article{181647,
  abstract     = {In this paper GaN and InGaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. The effects of several growth parameters on the film quality are discussed. The GaN and InGaN layers were evaluated by surface morphology studies, DC X-ray diffraction, electrical and optical characterisation.},
  author       = {Van der Stricht, Wim and Moerman, Ingrid and Demeester, Piet and Crawley, JA and Thrush, EJ},
  issn         = {0022-0248},
  journal      = {JOURNAL OF CRYSTAL GROWTH},
  keyword      = {STIMULATED-EMISSION,ROOM-TEMPERATURE,DIODES},
  language     = {eng},
  location     = {Cardiff, Wales, UK},
  number       = {1-4},
  pages        = {344--348},
  title        = {Study of GaN and InGaN films grown by metalorganic chemical vapour deposition},
  url          = {http://dx.doi.org/10.1016/S0022-0248(96)00595-7},
  volume       = {170},
  year         = {1997},
}

Chicago
Van der Stricht, Wim, Ingrid Moerman, Piet Demeester, JA Crawley, and EJ Thrush. 1997. “Study of GaN and InGaN Films Grown by Metalorganic Chemical Vapour Deposition.” Journal of Crystal Growth 170 (1-4): 344–348.
APA
Van der Stricht, W., Moerman, I., Demeester, P., Crawley, J., & Thrush, E. (1997). Study of GaN and InGaN films grown by metalorganic chemical vapour deposition. JOURNAL OF CRYSTAL GROWTH, 170(1-4), 344–348. Presented at the 8th International conference on Metalorganic Vapour Phase Epitaxy.
Vancouver
1.
Van der Stricht W, Moerman I, Demeester P, Crawley J, Thrush E. Study of GaN and InGaN films grown by metalorganic chemical vapour deposition. JOURNAL OF CRYSTAL GROWTH. 1997;170(1-4):344–8.
MLA
Van der Stricht, Wim, Ingrid Moerman, Piet Demeester, et al. “Study of GaN and InGaN Films Grown by Metalorganic Chemical Vapour Deposition.” JOURNAL OF CRYSTAL GROWTH 170.1-4 (1997): 344–348. Print.