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Growth and characterisation of mid-IR InAs0.9Sb0.1/InAs strained multiple quantum well light emitting diodes grown on InAs substrates.

(1997) IEE PROCEEDINGS-OPTOELECTRONICS. 144(5). p.295-298
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Chicago
GRIETENS, B, S NEMETH, C VAN HOOF, Peter Van Daele, and G BORGHS. 1997. “Growth and Characterisation of mid-IR InAs0.9Sb0.1/InAs Strained Multiple Quantum Well Light Emitting Diodes Grown on InAs Substrates.” Iee Proceedings-optoelectronics 144 (5): 295–298.
APA
GRIETENS, B., NEMETH, S., VAN HOOF, C., Van Daele, P., & BORGHS, G. (1997). Growth and characterisation of mid-IR InAs0.9Sb0.1/InAs strained multiple quantum well light emitting diodes grown on InAs substrates. IEE PROCEEDINGS-OPTOELECTRONICS, 144(5), 295–298.
Vancouver
1.
GRIETENS B, NEMETH S, VAN HOOF C, Van Daele P, BORGHS G. Growth and characterisation of mid-IR InAs0.9Sb0.1/InAs strained multiple quantum well light emitting diodes grown on InAs substrates. IEE PROCEEDINGS-OPTOELECTRONICS. 1997;144(5):295–8.
MLA
GRIETENS, B, S NEMETH, C VAN HOOF, et al. “Growth and Characterisation of mid-IR InAs0.9Sb0.1/InAs Strained Multiple Quantum Well Light Emitting Diodes Grown on InAs Substrates.” IEE PROCEEDINGS-OPTOELECTRONICS 144.5 (1997): 295–298. Print.
@article{178194,
  author       = {GRIETENS, B and NEMETH, S and VAN HOOF, C and Van Daele, Peter and BORGHS, G},
  issn         = {1350-2433},
  journal      = {IEE PROCEEDINGS-OPTOELECTRONICS},
  language     = {eng},
  number       = {5},
  pages        = {295--298},
  title        = {Growth and characterisation of mid-IR InAs0.9Sb0.1/InAs strained multiple quantum well light emitting diodes grown on InAs substrates.},
  volume       = {144},
  year         = {1997},
}

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