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Dark current optimisation for MOVPE grown 2.51 mu m wavelength InGaAs photodetectors.

(1998) ELECTRONICS LETTERS. 34(9). p.910-912
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Chicago
D’Hondt, Mark, Ingrid Moerman, and Piet Demeester. 1998. “Dark Current Optimisation for MOVPE Grown 2.51 Mu m Wavelength InGaAs Photodetectors.” Electronics Letters 34 (9): 910–912.
APA
D’Hondt, Mark, Moerman, I., & Demeester, P. (1998). Dark current optimisation for MOVPE grown 2.51 mu m wavelength InGaAs photodetectors. ELECTRONICS LETTERS, 34(9), 910–912.
Vancouver
1.
D’Hondt M, Moerman I, Demeester P. Dark current optimisation for MOVPE grown 2.51 mu m wavelength InGaAs photodetectors. ELECTRONICS LETTERS. 1998;34(9):910–2.
MLA
D’Hondt, Mark, Ingrid Moerman, and Piet Demeester. “Dark Current Optimisation for MOVPE Grown 2.51 Mu m Wavelength InGaAs Photodetectors.” ELECTRONICS LETTERS 34.9 (1998): 910–912. Print.
@article{178190,
  author       = {D'Hondt, Mark and Moerman, Ingrid and Demeester, Piet},
  issn         = {0013-5194},
  journal      = {ELECTRONICS LETTERS},
  language     = {eng},
  number       = {9},
  pages        = {910--912},
  title        = {Dark current optimisation for MOVPE grown 2.51 mu m wavelength InGaAs photodetectors.},
  volume       = {34},
  year         = {1998},
}

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